• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 2, 229 (2003)
[in Chinese]1,2,* and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese]. Numerical Stimulations of Statistical Properties of SASE FEL[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 229 Copy Citation Text show less
    References

    [1] Bonifacio R, Pellegrini C et al.Collective instabilities and high-gain regime in a free electron laser [J]. Opt.Commun.,1984, 50:373-377

    [2] Milton S V, Gluskin E, Biedron S G et al. Observation of self-amplified spontaneousemission and exponential growth at 530 nm [J]. Phy. Rev. Lett., 2000, 85:988-991

    [3] Andruskow J, Aune B, Ayvazyan V et al. First observation of self-amplifiedspontaneous emission in a free-electron laser at 109 nm wavelength [J]. Phy. Rev. Lett.,2000, 85:3825-3829

    [4] Wang J M, Yu L H. A transient analysis of a bunched beam free electron laser [J].Nucl Instr and Meth, 1986,A250:484-489

    [5] Yu Lihua, Krinsky S. Amplified spontaneous emission in a single pass free electronlaser [J]. Nucl Instr and Meth, 1989, A285:119-121

    [6] Saldin E L, Schneidmiller E A, Yurkov M V. Statistical properties of radiation fromVUV and X-ray free electron laser [J]. Opt. Commun., 1998, 148:383-403

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    [9] Yurkov M V, Ayvazyan V, Baboi N et al. Statistical properties of SASE FELradiation: experimental result fron VUV FEL at the TESLA Test Facility at DESY [R]. 23rdInternational free electron laser conference and the 8th FEL users workshop Germany,August, 2001.

    [10] .Penman C, Mcneil B W J. Simulation of input electron noise in the free-electronlaser [J]. Opt. Commun., 1992,90:82-84

    [in Chinese], [in Chinese]. Numerical Stimulations of Statistical Properties of SASE FEL[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 229
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