• Chinese Journal of Quantum Electronics
  • Vol. 27, Issue 3, 270 (2010)
Ji-liang QUAN1、*, Zhi-wei XIE1, Yuan-zheng YANG1, Xian-chao CHEN1, Wen-tao LI1, Liao Liu2, and Nan-ping WU2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    QUAN Ji-liang, XIE Zhi-wei, YANG Yuan-zheng, CHEN Xian-chao, LI Wen-tao, Liu Liao, WU Nan-ping. Study on the cracking and defects of Nd:YAG laser crystal[J]. Chinese Journal of Quantum Electronics, 2010, 27(3): 270 Copy Citation Text show less

    Abstract

    Cracking in Nd: YAG laser crystals grown along <111> by Czochralski method is often observed. The growth defects in the cracked Nd:YAG crystal were investigated with optical microscopy, scanning electron microscope(SEM), X-ray diffractometry and optical absorption method. There are a lot of inclusions in cracked crystal, whose composition deviates from the normal composition of crystal. The dislocation density is so high that the phenomenon of pile-up occurs. Some micro-cracks was observed in dislocations etch pit. Cracking results from stress concentration caused by inclusions, which is caused by components overcooling, fluctuating of growth rate and asymmetry of temperature gradient in later period of crystal growth.
    QUAN Ji-liang, XIE Zhi-wei, YANG Yuan-zheng, CHEN Xian-chao, LI Wen-tao, Liu Liao, WU Nan-ping. Study on the cracking and defects of Nd:YAG laser crystal[J]. Chinese Journal of Quantum Electronics, 2010, 27(3): 270
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