[2] Mazzillo M, Sciuto A, Catania G, et al. Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes [J]. IEEE Sensor Journal, 2012, 12(5): 1127-1130.
[3] Lien W, Tsai D, Lien D, et al. 4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °C [J]. IEEE Electron Device Letters, 2012, 33(11): 1586-1588.
[4] Kalinina E, Ivanov A, Strokan N, et al. Structure and characteristics of the high-temperature SiC detectors based on Al ion-implanted p+-n junctions [J]. Semicond. Sci. Technol., 2011, 2(4): 045001.
[5] Chen X, Zhu H, et al. High-performance 4H-SiC based ultraviolet p-i-n photodetector [J]. J. Appl. Phys., 2007, 102(2): 024505.
[6] Bai X, Guo X, Mcintosh D, et al. High detection sensitivity of ultraviolet 4H-SiC avlanche photodiodes [J]. IEEE Journal of Quantum Electronics, 2007, 43(12): 1159-1162.
[7] Cai J, Chen X, Hong R, et al. High-performance 4H-SiC-based p-i-n ultraviolet photodiode and investigation of its capacitance characteristics [J]. Optics Communications, 2014, 333: 182-186.
[8] Caputo D, Irrera F, Palma F, et al. Monitoring of photodegradation and recovery of a-Si:H p-i-n solar cells by capacitance measurements [J]. Physica Scripta., 1994(6), 49: 724-729.
[9] Bao X, Xu J, Li C, et al. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector [J]. Journal of Alloys and Compounds, 2013, 581: 289-292.
[10] Cheng C, Si J, Zhang X, et al. Capacitance characteristics of back-illuminated Al0.42Ga0.58/Al0.40Ga0.60N heterojunction p-i-n solar-blind UV photodiode [J]. Appl. Phys. Lett., 2007, 91(25): 253510.
[11] Sze S, Ng K. Physics of Semiconductor Devices [M]. 3rd Edi., New Jersey: John Wiley and Sons, Inc., 2006: 85-86.
[12] Jayant Baliga B. Sillicon Carbide Power Devices [M]. World Scientific Publishing Co. Pte. Ltd., Singapore, 2005.