• Chinese Optics Letters
  • Vol. 7, Issue 1, 0152 (2009)
[in Chinese], [in Chinese], and [in Chinese]
DOI: 10.3788/COL20090701.0052 Cite this Article Set citation alerts
[in Chinese], [in Chinese], [in Chinese]. Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. Chinese Optics Letters, 2009, 7(1): 0152 Copy Citation Text show less
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[in Chinese], [in Chinese], [in Chinese]. Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. Chinese Optics Letters, 2009, 7(1): 0152
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