Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

[in Chinese]; [in Chinese]; [in Chinese]

doi:10.3788/COL20090701.0052

Journals >Chinese Optics Letters >Volume 7 >Issue 1 >Page 0152 > Article

Chinese Optics Letters
Vol. 7, Issue 1, 0152 (2009)

Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

[in Chinese], [in Chinese], and [in Chinese]

DOI: 10.3788/COL20090701.0052 Cite this Article Set citation alerts

[in Chinese], [in Chinese], [in Chinese]. Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[J]. Chinese Optics Letters, 2009, 7(1): 0152 Copy Citation Text

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