• Opto-Electronic Engineering
  • Vol. 49, Issue 2, 210388-1 (2022)
Jianing Liao, Dongshi Zhang*, and Zhuguo Li*
Author Affiliations
  • Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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    DOI: 10.12086/oee.2022.210388 Cite this Article
    Jianing Liao, Dongshi Zhang, Zhuguo Li. Advance in femtosecond laser fabrication of flexible electronics[J]. Opto-Electronic Engineering, 2022, 49(2): 210388-1 Copy Citation Text show less
    Schematic diagram of the laser synthesis and treatment in liquid[20]. (a) Laser ablation in liquid (LAL); (b) Laser fragmentation in liquid (LFL); (c) Laser melting in liquid (LML); (d) Laser defect-engineering in liquid (LDL)
    Fig. 1. Schematic diagram of the laser synthesis and treatment in liquid[20]. (a) Laser ablation in liquid (LAL); (b) Laser fragmentation in liquid (LFL); (c) Laser melting in liquid (LML); (d) Laser defect-engineering in liquid (LDL)
    (a) Schematic illustration of femtosecond laser ablation synthesis with ZnO QDs to fabricate photodetectors; (b) Transient photocurrent generation under deep-ultraviolet illumination for photodetector; (c) Responsivity measurement of photodetector as a function of the number of bending cycles. The inset photos show the photodetector bending degree[72]
    Fig. 2. (a) Schematic illustration of femtosecond laser ablation synthesis with ZnO QDs to fabricate photodetectors; (b) Transient photocurrent generation under deep-ultraviolet illumination for photodetector; (c) Responsivity measurement of photodetector as a function of the number of bending cycles. The inset photos show the photodetector bending degree[72]
    (a) Manufacturing process of femtosecond laser reduction based on Cu ionic precursor; (b), (c) SEM images and XRD pattern of Cu microelectrode prepared with different laser powers; (d) Copper microelectrode sheet resistance change curve with laser power, inset: photograph of the LED circuit prepared from Cu microelectrode[39]
    Fig. 3. (a) Manufacturing process of femtosecond laser reduction based on Cu ionic precursor; (b), (c) SEM images and XRD pattern of Cu microelectrode prepared with different laser powers; (d) Copper microelectrode sheet resistance change curve with laser power, inset: photograph of the LED circuit prepared from Cu microelectrode[39]
    (a) Manufacturing process of femtosecond laser writing rGO/PDMS composite acoustic sensor[85]; (b) Schematic illustration of the interaction between water molecules and GO nanosheets[86]; (c) Prototype demonstration of e-skin used for simulation of noncontact sensing properties of human skin[86]
    Fig. 4. (a) Manufacturing process of femtosecond laser writing rGO/PDMS composite acoustic sensor[85]; (b) Schematic illustration of the interaction between water molecules and GO nanosheets[86]; (c) Prototype demonstration of e-skin used for simulation of noncontact sensing properties of human skin[86]
    (a) Schematics of spatially shaped femtosecond laser strategy to fabricate the graphene/MnO2 micro-supercapacitors; (b) Schematic diagram of the formation of LIG/MnO2 composites induced by femtosecond laser; (c) The area-specific capacitance of different geometries under different current density; (d) The areal capacitance and volumetric capacitance of interdigital micro-supercapacitors under different scan rates[87]
    Fig. 5. (a) Schematics of spatially shaped femtosecond laser strategy to fabricate the graphene/MnO2 micro-supercapacitors; (b) Schematic diagram of the formation of LIG/MnO2 composites induced by femtosecond laser; (c) The area-specific capacitance of different geometries under different current density; (d) The areal capacitance and volumetric capacitance of interdigital micro-supercapacitors under different scan rates[87]
    (a) Schematic diagram of femtosecond laser direct writing graphene flexible thermistor[89]; (b) Schematic diagram of fabrication of micro-supercapacitors by femtosecond laser carbonization and photographic image of micro-supercapacitor, cyclic voltammetry (CV) curves of micro-supercapacitors with different bending degrees ( the scanning speed is 1 V/s)[90]; (c) Schematic diagram of sensor array fabricated by femtosecond laser micromachining method[91]; (d) Sensor array simultaneously detects the temperature and pressure of different objects[91]; (e) Electrical signal output of the temperature sensor affected by temperature changes[91]; (f) Electrical signal output of the pressure sensor affected by load pressure changes[91]
    Fig. 6. (a) Schematic diagram of femtosecond laser direct writing graphene flexible thermistor[89]; (b) Schematic diagram of fabrication of micro-supercapacitors by femtosecond laser carbonization and photographic image of micro-supercapacitor, cyclic voltammetry (CV) curves of micro-supercapacitors with different bending degrees ( the scanning speed is 1 V/s)[90]; (c) Schematic diagram of sensor array fabricated by femtosecond laser micromachining method[91]; (d) Sensor array simultaneously detects the temperature and pressure of different objects[91]; (e) Electrical signal output of the temperature sensor affected by temperature changes[91]; (f) Electrical signal output of the pressure sensor affected by load pressure changes[91]
    (a) Relative electric field enhancement |E/E0| distribution of the Cu nanoparticle dimer under 960 mW laser irradiation[39]; (b) Temperature field distribution of a Cu nanoparticle dimer under 960 mW single pulse laser irradiation after 5 ps[39]; (c) Relationship between electron and lattice temperature of Cu nanoparticles in the first 5 ps under different laser powers of single pulse laser irradiation[39]; (d), (e) Sheet resistances and transmittance spectra of Ag NWs films before and after femtosecond laser irradiation[98]; (f) SAED patterns of Ag NW joints and different parts irradiated by femtosecond laser[98]
    Fig. 7. (a) Relative electric field enhancement |E/E0| distribution of the Cu nanoparticle dimer under 960 mW laser irradiation[39]; (b) Temperature field distribution of a Cu nanoparticle dimer under 960 mW single pulse laser irradiation after 5 ps[39]; (c) Relationship between electron and lattice temperature of Cu nanoparticles in the first 5 ps under different laser powers of single pulse laser irradiation[39]; (d), (e) Sheet resistances and transmittance spectra of Ag NWs films before and after femtosecond laser irradiation[98]; (f) SAED patterns of Ag NW joints and different parts irradiated by femtosecond laser[98]
    Resistance change of graphene sensor with time under the certain conditions: (a) enclasping; (b) holding a beaker with hot water (60 °C); (c) smoking; (d) humidifying[104]
    Fig. 8. Resistance change of graphene sensor with time under the certain conditions: (a) enclasping; (b) holding a beaker with hot water (60 °C); (c) smoking; (d) humidifying[104]
    (a) Schematic of fabrication of double sided micro-supercapacitors by one-step femtosecond laser etching; (b) Photographs of double-side micro-supercapacitors and different connections of twelve spiral units in ‘flower petal’ pattern[105]
    Fig. 9. (a) Schematic of fabrication of double sided micro-supercapacitors by one-step femtosecond laser etching; (b) Photographs of double-side micro-supercapacitors and different connections of twelve spiral units in ‘flower petal’ pattern[105]
    Schematic of the fabrication process of TENG prepared by femtosecond laser ablation of Cu micro/nano-cones and PDMS micro-bowl[108]; (b) Schematic illustration of the fabrication of the PDMS by femtosecond laser irradiation and SEM images of the PDMS at laser power of 29 mW and 132 mW[27]; (c) open-circuit voltage (d) short-circuit current of the fabricated TENGs with laser power ranging from 0 to 132 mW[27]
    Fig. 10. Schematic of the fabrication process of TENG prepared by femtosecond laser ablation of Cu micro/nano-cones and PDMS micro-bowl[108]; (b) Schematic illustration of the fabrication of the PDMS by femtosecond laser irradiation and SEM images of the PDMS at laser power of 29 mW and 132 mW[27]; (c) open-circuit voltage (d) short-circuit current of the fabricated TENGs with laser power ranging from 0 to 132 mW[27]
    Jianing Liao, Dongshi Zhang, Zhuguo Li. Advance in femtosecond laser fabrication of flexible electronics[J]. Opto-Electronic Engineering, 2022, 49(2): 210388-1
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