Author Affiliations
Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, Chinashow less
Fig. 1. Schematic diagram of the laser synthesis and treatment in liquid
[20]. (a) Laser ablation in liquid (LAL); (b) Laser fragmentation in liquid (LFL); (c) Laser melting in liquid (LML); (d) Laser defect-engineering in liquid (LDL)
Fig. 2. (a) Schematic illustration of femtosecond laser ablation synthesis with ZnO QDs to fabricate photodetectors; (b) Transient photocurrent generation under deep-ultraviolet illumination for photodetector; (c) Responsivity measurement of photodetector as a function of the number of bending cycles. The inset photos show the photodetector bending degree
[72] Fig. 3. (a) Manufacturing process of femtosecond laser reduction based on Cu ionic precursor; (b), (c) SEM images and XRD pattern of Cu microelectrode prepared with different laser powers; (d) Copper microelectrode sheet resistance change curve with laser power, inset: photograph of the LED circuit prepared from Cu microelectrode
[39] Fig. 4. (a) Manufacturing process of femtosecond laser writing rGO/PDMS composite acoustic sensor
[85]; (b) Schematic illustration of the interaction between water molecules and GO nanosheets
[86]; (c) Prototype demonstration of e-skin used for simulation of noncontact sensing properties of human skin
[86] Fig. 5. (a) Schematics of spatially shaped femtosecond laser strategy to fabricate the graphene/MnO
2 micro-supercapacitors; (b) Schematic diagram of the formation of LIG/MnO
2 composites induced by femtosecond laser; (c) The area-specific capacitance of different geometries under different current density; (d) The areal capacitance and volumetric capacitance of interdigital micro-supercapacitors under different scan rates
[87] Fig. 6. (a) Schematic diagram of femtosecond laser direct writing graphene flexible thermistor
[89]; (b) Schematic diagram of fabrication of micro-supercapacitors by femtosecond laser carbonization and photographic image of micro-supercapacitor, cyclic voltammetry (CV) curves of micro-supercapacitors with different bending degrees ( the scanning speed is 1 V/s)
[90]; (c) Schematic diagram of sensor array fabricated by femtosecond laser micromachining method
[91]; (d) Sensor array simultaneously detects the temperature and pressure of different objects
[91]; (e) Electrical signal output of the temperature sensor affected by temperature changes
[91]; (f) Electrical signal output of the pressure sensor affected by load pressure changes
[91] Fig. 7. (a) Relative electric field enhancement |
E/
E0| distribution of the Cu nanoparticle dimer under 960 mW laser irradiation
[39]; (b) Temperature field distribution of a Cu nanoparticle dimer under 960 mW single pulse laser irradiation after 5 ps
[39]; (c) Relationship between electron and lattice temperature of Cu nanoparticles in the first 5 ps under different laser powers of single pulse laser irradiation
[39]; (d), (e) Sheet resistances and transmittance spectra of Ag NWs films before and after femtosecond laser irradiation
[98]; (f) SAED patterns of Ag NW joints and different parts irradiated by femtosecond laser
[98] Fig. 8. Resistance change of graphene sensor with time under the certain conditions: (a) enclasping; (b) holding a beaker with hot water (60 °C); (c) smoking; (d) humidifying
[104] Fig. 9. (a) Schematic of fabrication of double sided micro-supercapacitors by one-step femtosecond laser etching; (b) Photographs of double-side micro-supercapacitors and different connections of twelve spiral units in ‘flower petal’ pattern
[105] Fig. 10. Schematic of the fabrication process of TENG prepared by femtosecond laser ablation of Cu micro/nano-cones and PDMS micro-bowl
[108]; (b) Schematic illustration of the fabrication of the PDMS by femtosecond laser irradiation and SEM images of the PDMS at laser power of 29 mW and 132 mW
[27]; (c) open-circuit voltage (d) short-circuit current of the fabricated TENGs with laser power ranging from 0 to 132 mW
[27]