
- Journal of Semiconductors
- Vol. 43, Issue 6, 062302 (2022)
Abstract
1. Introduction
In the process of mining, industrial production and transportation, toxic, explosive and corrosive gases are often produced[
Therefore, in this paper, we report a single-mode WG-FP hybrid cavity laser with a wide wavelength tuning range from 1760.87 to 1773.39 nm. The side-mode suppression ratio (SMSR) for the whole tuning range is over 30 dB. And the lasing output power was over 3.5 mW at 20 °C. Compared with the DFB lasers, DBR lasers, and VCSELs, the hybrid cavity laser does not introduce the grating etching process and complex epitaxial structure, which can reduce the fabrication difficulty and cost. And the over –12.5 nm tuning range incorporates absorption lines of methane and hydrogen chloride[
2. Simulation and fabrication
2.1. Simulation results
Aiming to study the mode characteristics of the WG-FP hybrid cavity laser, a systematic numerical simulation based on the two-dimensional (2D) finite element method (FEM) was adopted[
Figure 1.(Color online) The simulation parameters of the WG-FP hybrid cavity laser.
To explore the influence of square microcavity on lasing mode selection, mode Q factor that varied with different mode wavelengths was simulated, as shown in Fig. 2, where theQ factor can be defined as [
Figure 2.(Color online) The mode
Referring to Fig. 2(a),the mode Q factor in the WG-FP hybrid cavity fluctuated periodically, and the Q factors were significant at the mode wavelengths of 1747.8, 1764.8, and 1782.2 nm. Based on the relationship between the gain coefficient g and the imaginary part of the refractive index Im(n) [
whereω is the angular frequency of light waves,c is the speed of light, and λ is the wavelength of light waves.
The relationship between Q factor and gain of the mode wavelength at 1764.8 nm was explored. By changing the imaginary part of the refractive index of the square microcavity Im(nWG), while keeping the imaginary part of the refractive index of the FP cavity Im(nFP) = 0, the change of the mode Q factor was studied with the imaginary part of the refractive index of the square microcavity changed. As shown in Fig. 2(b), as Im(nWG) decreased from 3 × 10-5 to –3 × 10-5, which means the gain coefficient increased from –2.1 to 2.1 cm–1, the modeQ factor near the mode wavelength of 1764.8 nm increased with the improvement of the gain coefficient, which showed low sensitivity to the variation of Im(nWG) at other mode wavelengths. We infer that the mode at 1764.8 nm is the coupling mode of the square microcavity and the FP cavity.
To study the center wavelength tuning ability of the laser, we changed the real part of the refractive index of the square cavity Re(nWG) to characterize the change of the laser when the working current is applied. As shown in Fig. 3, the mode center wavelengths with the change of the index ΔnWG were simulated. It can be found that as the refractive index increased, the mode center wavelength of the laser gradually redshifted.
Figure 3.The mode center wavelengths variation with the change of the real part of the square microcavity refractive index Δ
2.2. Fabrication process
In this paper, the materials of the devices were grown by metal organic chemical vapor deposition (MOCVD) equipment. Combined with the experiences of material epitaxy in our group[
Compared with DFB and DBR lasers, the WG-FP hybrid cavity laser does not need to etch grating, which reduces regrowth processes, simplifies the fabrication process, and reduces the cost. The fabrication process of the WG-FP hybrid cavity laser is shown in Fig. 4. Standard contacting photolithography and the inductively coupled plasma (ICP) etching method were adopted to ensure the quality of the cavity. As shown in Fig. 5(a), the sidewall was supposed to be vertical and smooth. To reduce the light leakage to the substrate, the etching depth was greater than 4.5 μm, which meant the quantum well region was exposed. SiO2 and BCB layers were deposited and coated to protect the active region from oxidation and electric leakage, and a large area of reactive ion etching (RIE) was performed then to expose the top of the contact layer for depositing the electrode metal. To guarantee the two cavities will be electrically isolated from each other, the p-InGaAs contact layer should be removed. Therefore, a shallow isolation trench of about 300 nm in depth and 5 μm in width was formed by wet etching. This depth is far from the active region and the waveguide layer, which will not affect the mode characteristics of the device. At last, Ti/Au and AuGeNi/Au were deposited to form p and n type electrodes respectively. The microscope image of the fabricated WG-FP hybrid cavity laser was shown in Fig. 5(b), two rectangular p-type electrodes are used for current injection into the two cavities separately.
Figure 4.(Color online) Fabrication process of the WG-FP hybrid cavity laser.
Figure 5.(Color online) (a) Cross-sectional view SEM image after ICP etching. (b) The microscope image of the fabricated WG-FP hybrid cavity laser.
3. Experimental results and discussion
The hybrid-cavity was mounted on a Cu submount with the p-side upward and was tested under continuous-wave (CW) at 20 °C. To ensure that the two cavities were electrically isolated from each other, we tested the I–V curve. The isolation resistance is about 25 kΩ as calculated, which was enough to achieve the electrical isolation[
Figure 6.(Color online) (a) Curves of light power variation with
The emitting light was partially collected by a tapered fiber and transmitted to an optical spectrum analyzer with a resolution of 0.05 nm through a single-mode fiber. Lasing spectrum measured for the laser under IFP = 80 mA, IWG = 70 mA was shown in Fig. 6(b). The laser emitted as a single mode with the side-mode suppression ratio (SMSR) of 33.79 dB. As shown in Figs. 7(a) and 7(c), when IFP = 80 mA, the center wavelength redshifted from 1761.52 to 1771.63 nm (10.11 nm) with the SMSRs over 28 dB, as the IWG continuously increased from 5 to 88 mA. As shown in Figs. 7(b) and 7(d), whenIWG = 35 mA, the center wavelength redshifted from 1762.32 to 1763.05 nm (0.73 nm) with SMSRs over 32 dB, as the IFP continuously increased from 40 to 80 mA. Owing to the small size of the square microcavity, it is more sensitive to the changes of temperature and refractive index. Therefore, the square cavity has a greater influence on the wavelength change which can be used for coarse tuning, while the FP cavity can be used for fine-tuning.
Figure 7.(Color online) Lasing characteristics with the variations of
By varying the injected current of the square cavity and FP cavity simultaneously, the wavelength tuning range of 12.52 nm from 1760.87 to 1773.39 nm was realized, and the SMSRs were above 30 dB for the whole course. The superimposed lasing spectrum is shown in Fig. 8. Compared with the previous works[
Figure 8.(Color online) Superimposed lasing spectra with a wavelength continuous tuning range of 12.52 nm by varying
4. Conclusion
In conclusion, a hybrid-cavity laser consisting of a square Whispering-Gallery microcavity and a Fabry–Pérot was demonstrated. The output power was over 3.5 mW and a wavelength tuning range over 12.5 nm were obtained. Besides, the laser performed single-mode emitting with the side-mode suppression ratio over 30 dB. Light-emitting range from 1760.87 to 1773.39 nm corresponds to the absorption lines of methane and hydrogen chloride. Moreover, grating etching process and complex epitaxial structure were not introduced into the fabrication process, which reduced the manufacturing difficulty and cost while achieving a wide wavelength tuning range as well. Thus, the device yield will be improved, and it is more conducive to production. Therefore, the WG-FP hybrid cavity laser illustrated a practical perspective for certain purposes of gas sensing.
Acknowledgements
This work was supported by the National Key Research and Development Program of China (Grant No. 2018YFA0209001), the Key Project of Frontier Science Research Project of CAS (Grant No. QYZDY-SSW-JSC021), and the Strategic Priority Research Program of CAS (Grant No. XDB43020202).
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