Quantum Well Intermixing of 915 nm InGaAsP/GaAsP Primary Epitaxial Wafers

Tianjiang He; Hongqi Jing; Lingni Zhu; Suping Liu; Xiaoyu Ma

doi:10.3788/AOS202242.0114003

Journals >Acta Optica Sinica >Volume 42 >Issue 1 >Page 0114003 > Article

Acta Optica Sinica
Vol. 42, Issue 1, 0114003 (2022)

Quantum Well Intermixing of 915 nm InGaAsP/GaAsP Primary Epitaxial Wafers

Tianjiang He^1、2, Hongqi Jing^1、*, Lingni Zhu¹, Suping Liu¹, and Xiaoyu Ma^1、2

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronics, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/AOS202242.0114003 Cite this Article Set citation alerts

Tianjiang He, Hongqi Jing, Lingni Zhu, Suping Liu, Xiaoyu Ma. Quantum Well Intermixing of 915 nm InGaAsP/GaAsP Primary Epitaxial Wafers[J]. Acta Optica Sinica, 2022, 42(1): 0114003 Copy Citation Text

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Article index updated: Jun. 12, 2024

The article is cited by 4 article(s) CLP online library. (Some content might be in Chinese.)

Tianjiang He, Hongqi Jing, Lingni Zhu, Suping Liu, Xiaoyu Ma. Quantum Well Intermixing of 915 nm InGaAsP/GaAsP Primary Epitaxial Wafers[J]. Acta Optica Sinica, 2022, 42(1): 0114003

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