HgCdTe midwavelength infrared detector with interface passivated by hydrogen implantation

YE ZhenHua; HHUANG Jian; YIN WenTing; FENG JingWen; CHEN HongLei; CHEN Lu; LIAO QingJun; LIN Chun; HU XiaoNing; DING RuiJun; HE Li

Journals >Journal of Infrared and Millimeter Waves >Volume 30 >Issue 3 >Page 260 > Article

Journal of Infrared and Millimeter Waves
Vol. 30, Issue 3, 260 (2011)

HgCdTe midwavelength infrared detector with interface passivated by hydrogen implantation

YE ZhenHua^1、2、*, HHUANG Jian^1、2, YIN WenTing^1、2, FENG JingWen¹, CHEN HongLei¹, CHEN Lu¹, LIAO QingJun¹, LIN Chun¹, HU XiaoNing¹, DING RuiJun¹, and HE Li¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

YE ZhenHua, HHUANG Jian, YIN WenTing, FENG JingWen, CHEN HongLei, CHEN Lu, LIAO QingJun, LIN Chun, HU XiaoNing, DING RuiJun, HE Li. HgCdTe midwavelength infrared detector with interface passivated by hydrogen implantation[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 260 Copy Citation Text

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References

[1] Rogalski A, Antoszewski J, Faraone L. Thirdgeneration infrared photodetector arrays［J］. JOURNAL OF APPLIED PHYSICS,2009,105(09):091101－1.

[2] Rogalski A. New material systems for third generation infrared detectors［J］. SPIE,2009,7388:73880J－1.

[4] Dewames R E， Williams G M， Pasko J G， et al. Current Generation Mechanisms In Small Band Gap HgCdTe pn Junctions Fabricated by Ion Implantation［J］. Journal of Crystal Growth,1988,86:849－858.

[6] Gopal V, Westerhout R J, Faraone L. Surface leakage current contribution to the dynamic esistance and 1/f noise in midwave mercury cadmium telluride infrared photodiodes[J]. Infrared Physics & Technology,2008,51:532－536.

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