AlGaN solar-blind APD with low breakdown voltage

Kexiu Dong; Dunjun Chen; Yangyi Zhang; Yizhe Sun; Jianping Shi

doi:10.3969/j.issn.1003-501x.2017.04.004

Journals >Opto-Electronic Engineering >Volume 44 >Issue 4 >Page 467 > Article

Opto-Electronic Engineering
Vol. 44, Issue 4, 467 (2017)

AlGaN solar-blind APD with low breakdown voltage

Kexiu Dong^1、2, Dunjun Chen^1、2, Yangyi Zhang¹, Yizhe Sun¹, and Jianping Shi³

Author Affiliations

¹School of Electronic and Electrical Engineering, Chuzhou University, Chuzhou 239000, China

²Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

³College of Physics and Electronic Information, Anhui Normal University, Wuhu 241000, China

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DOI: 10.3969/j.issn.1003-501x.2017.04.004 Cite this Article

Kexiu Dong, Dunjun Chen, Yangyi Zhang, Yizhe Sun, Jianping Shi. AlGaN solar-blind APD with low breakdown voltage[J]. Opto-Electronic Engineering, 2017, 44(4): 467 Copy Citation Text

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References

Kexiu Dong, Dunjun Chen, Yangyi Zhang, Yizhe Sun, Jianping Shi. AlGaN solar-blind APD with low breakdown voltage[J]. Opto-Electronic Engineering, 2017, 44(4): 467

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