[1] STERN F.Dispersion of the index of refraction near the absorption edge of semiconductors. Phys. Rev.,1964,133:A 1653
[2] ZEMEL J N, JENSEN J D, SCHOOLAR R B. Electrical and optical properties of epitaxial films of PbS,PbSe, PbTe, and SnTe,Phys. Rev.,1965,140: A330
[3] HERMANN K H, MELZER V, MUELLER U. Interband and intraband contributions to refractive index and dispersion in narrow-gap semiconductors, Infrared Phys.Technol.,1993,34: 117
[4] YUAN S,SPRINGHOLZ G, BAUER G,et al. Electrical and optical properties of PbTe/Pb1-xEuxTe multiple-quantum-well structures.Phys. Rev.,1994,49: 5476
[5] YUAN S,KRENN H, SPRINGHOLZ G, BAUER G. Large refractive index enhancement in PbTe/Pb1-xEuxTe multiquantum-well structures,Appl.Phys. Lett.,1993,62: 885
[6] KUCERA Z.Dispersion of the refractive index of Hg1-xCdxTe,Phys. Status Solidi.(a), 1987,100: 659
[7] FINKMAN E, NEMIROVSKY Y. Infrared optical absorption of Hg1-xCdxTe.J.Appl. Phys.,1979,50: 4356
[8] FINKMAN E, SCHACHAM S E. The exponential optical absorption band tail of Hg1-xCdxTe. J.Appl.Phys.,1984,56: 2896
[9] JENSEN B, TORABI A.Linear and nonlinear intensity dependent refractive index of Hg1-xCdxTe. J.Appl.Phys.,1983,54: 5945
[10] LIU K,CHU J, TANG D.Composition and temperature dependence of the refractive index in Hg1-xCdxTe. J.Appl. Phys.,1994,75: 4176
[11] CHU J H, XU S, TANG D.Energy gap versus alloy composition and temperature in Hg1-xCdxTe. Appl.Phys.Lett.,1983,43: 1064
[12] CHU J H, MI Z, TANG D. Band-to-band optical absorption in narrow-gap Hg1-xCdxTe semiconductors.J.Appl. Phys.,1992,71(): 3955
[14] AZZAM R M A, BASHARA N M.Ellipsometry and Polarized Light. Amsterdam:North-Holland,1977
[16] CHU H H, LI B, LIU K,et al. Empirical rule of intrinsic absorption spectroscopy in Hg1-xCdxTe.J.Appl. Phys.,1994,75: 1234
[17] HERRMANN K H, MELZER V. The refractive index enhancement of Eg in narrow-gap semiconductors: comparison between the interband absorption edge and the oscillator model. Infrared Phys. Technol.,1996,37: 753
