• Laser & Optoelectronics Progress
  • Vol. 56, Issue 9, 091402 (2019)
Qiuyue Zhang1, Hongqi Jing2, Qinghe Yuan2, Xiaoyu Ma2, and Lianhe Dong1、*
Author Affiliations
  • 1 Institute of Opto-Electronics Engineer, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.3788/LOP56.091402 Cite this Article Set citation alerts
    Qiuyue Zhang, Hongqi Jing, Qinghe Yuan, Xiaoyu Ma, Lianhe Dong. Packaging of Semiconductor Laser Bars in Tube Furnace[J]. Laser & Optoelectronics Progress, 2019, 56(9): 091402 Copy Citation Text show less
    Epitaxial structure
    Fig. 1. Epitaxial structure
    Structural diagram of packing of semiconductor laser bar
    Fig. 2. Structural diagram of packing of semiconductor laser bar
    X-ray patterns of samples at different tube furnace temperatures. (a) 600 ℃; (b) 650 ℃; (c) 700 ℃
    Fig. 3. X-ray patterns of samples at different tube furnace temperatures. (a) 600 ℃; (b) 650 ℃; (c) 700 ℃
    Test system of semiconductor laser bar
    Fig. 4. Test system of semiconductor laser bar
    Smile effect imaging at different soldering time. (a) 100 s; (b) 110 s; (c) 120 s
    Fig. 5. Smile effect imaging at different soldering time. (a) 100 s; (b) 110 s; (c) 120 s
    Serial numberSolderingtime /sOutputpower /WThresholdcurrent /AOperatingcurrent /AOperatingvoltage /VPhotoelectricefficiency /%
    1100101.018.421131.8044.8
    2110102.517.151141.7647.0
    3120100.418.721141.9445.9
    Table 1. Photoelectric parameters of 100 W semiconductor laser bar
    Qiuyue Zhang, Hongqi Jing, Qinghe Yuan, Xiaoyu Ma, Lianhe Dong. Packaging of Semiconductor Laser Bars in Tube Furnace[J]. Laser & Optoelectronics Progress, 2019, 56(9): 091402
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