Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch

Bozhang Dong; Jianan Duan; Heming Huang; Justin C. Norman; Kenichi Nishi; Keizo Takemasa; Mitsuru Sugawara; John E. Bowers; Frédéric Grillot

doi:10.1364/PRJ.421285

[1] R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, J. E. Bowers. Heterogeneously integrated InP/silicon photonics: fabricating fully functional transceivers. IEEE Nanotechnol. Mag., 13, 17-26(2019).

[2] K. Numata, J. R. Chen, S. T. Wu, J. B. Abshire, M. A. Krainak. Frequency stabilization of distributed-feedback laser diodes at 1572 nm for lidar measurements of atmospheric carbon dioxide. Appl. Opt., 50, 1047-1056(2011).

[3] S. Matsuo, T. Fujii, K. Hasebe, K. Takeda, T. Sato, T. Kakitsuka. Directly modulated DFB laser on SiO₂/Si substrate for datacenter networks. J. Lightwave Technol., 33, 1217-1222(2015).

[4] J. Duan, H. Huang, Z. Lu, P. Poole, C. Wang, F. Grillot. Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers. Appl. Phys. Lett., 112, 121102(2018).

[5] N. Andriolli, F. Bontempi, G. Contestabile. InP monolithically integrated transmitters based on high speed directly modulated DFB lasers. IEEE J. Sel. Top. Quantum Electron., 26, 1500606(2020).

[6] H. Nishimoto, M. Yamaguchi, I. Mito, K. Kobayashi. High-frequency response for DFB LD due to a wavelength detuning effect. J. Lightwave Technol., 5, 1399-1402(1987).

[7] H. Cantú, A. McKee, D. Childs, S. Watson, A. Kelly. Dynamic performance of detuned ridge waveguide AlInGaAs distributed feedback laser diodes. Microw. Opt. Technol. Lett., 59, 1468-1470(2017).

[8] K. Schires, N. Girard, G. Baili, G.-H. Duan, S. Gomez, F. Grillot. Dynamics of hybrid III-V silicon semiconductor lasers for integrated photonics. IEEE J. Sel. Top. Quantum Electron., 22, 43-49(2016).

[9] R. Tkach, A. Chraplyvy. Regimes of feedback effects in 1.5-μm distributed feedback lasers. J. Lightwave Technol., 4, 1655-1661(1986).

[10] J. Mørk, J. Mark, B. Tromborg. Route to chaos and competition between relaxation oscillations for a semiconductor laser with optical feedback. Phys. Rev. Lett., 65, 1999-2002(1990).

[11] K. Petermann. External optical feedback phenomena in semiconductor lasers. IEEE J. Sel. Top. Quantum Electron., 1, 480-489(1995).

[12] D. Lenstra, B. Verbeek, A. Den Boef. Coherence collapse in single-mode semiconductor lasers due to optical feedback. IEEE J. Quantum Electron., 21, 674-679(1985).

[13] H. Huang, J. Duan, D. Jung, A. Y. Liu, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot. Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon. J. Opt. Soc. Am. B, 35, 2780-2787(2018).

[14] D. Lenstra, T. T. M. van Schaijk, K. A. Williams. Toward a feedback-insensitive semiconductor laser. IEEE J. Sel. Top. Quantum Electron., 25, 1502113(2019).

[15] F. Klopf, J. Reithmaier, A. Forchel. Highly efficient GaInAs/(Al) GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers. Appl. Phys. Lett., 77, 1419-1421(2000).

[16] A. Ukhanov, A. Stintz, P. Eliseev, K. Malloy. Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers. Appl. Phys. Lett., 84, 1058-1060(2004).

[17] A. Capua, L. Rozenfeld, V. Mikhelashvili, G. Eisenstein, M. Kuntz, M. Laemmlin, D. Bimberg. Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser. Opt. Express, 15, 5388-5393(2007).

[18] Z. Lu, J. Liu, C. Song, J. Weber, Y. Mao, S. Chang, H. Ding, P. Poole, P. Barrios, D. Poitras, S. Janz, M. O’Sullivan. High performance InAs/InP quantum dot 34.462-GHz C-band coherent comb laser module. Opt. Express, 26, 2160-2167(2018).

[19] J. Duan, Y. Zhou, B. Dong, H. Huang, J. C. Norman, D. Jung, Z. Zhang, C. Wang, J. E. Bowers, F. Grillot. Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon. Opt. Lett., 45, 4887-4890(2020).

[20] H. Huang, J. Duan, B. Dong, J. Norman, D. Jung, J. E. Bowers, F. Grillot. Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback. APL Photon., 5, 016103(2020).

[21] M. Matsuda, N. Yasuoka, K. Nishi, K. Takemasa, T. Yamamoto, M. Sugawara, Y. Arakawa. Low-noise characteristics on 1.3-μm-Wavelength quantum-dot DFB lasers under external optical feedback. IEEE International Semiconductor Laser Conference (ISLC), 1-2(2018).

[22] J. Duan, H. Huang, B. Dong, J. C. Norman, Z. Zhang, J. E. Bowers, F. Grillot. Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration. Photon. Res., 7, 1222-1228(2019).

[23] B. Dong, J.-D. Chen, F.-Y. Lin, J. C. Norman, J. E. Bowers, F. Grillot. Dynamic and nonlinear properties of epitaxial quantum-dot lasers on silicon operating under long-and short-cavity feedback conditions for photonic integrated circuits. Phys. Rev. A, 103, 033509(2021).

[24] A. Y. Liu, S. Srinivasan, J. Norman, A. C. Gossard, J. E. Bowers. Quantum dot lasers for silicon photonics. Photon. Res., 3, B1-B9(2015).

[25] T. Katsuyama. Development of semiconductor laser for optical communication. SEI Tech. Rev., 69, 13-20(2009).

[26] G. P. Agrawal, N. K. Dutta. Semiconductor Lasers(2013).

[27] G. Morthier, P. Vankwikelberge. Handbook of Distributed Feedback Laser Diodes(2013).

[28] K. Nishi, K. Takemasa, M. Sugawara, Y. Arakawa. Development of quantum dot lasers for data-com and silicon photonics applications. IEEE J. Sel. Top. Quantum Electron., 23, 1901007(2017).

[29] H. Soda, Y. Kotaki, H. Sudo, H. Ishikawa, S. Yamakoshi, H. Imai. Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers. IEEE J. Quantum Electron., 23, 804-814(1987).

[30] K. Takada, Y. Tanaka, T. Matsumoto, M. Ekawa, H. Song, Y. Nakata, M. Yamaguchi, K. Nishi, T. Yamamoto, M. Sugawara, Y. Arakawa. Wide-temperature-range 10.3 Gbit/s operations of 1.3 μm high-density quantum-dot DFB lasers. Electron. Lett., 47, 206-208(2011).

[31] S. J. Jeong, J. K. Kang, K. Oh, B. K. Kang, T.-J. Kim, Y. Sin. Effect of wavelength detuning on spectral and temperature characteristics of 1.3-μm DFB lasers. Proc. SPIE, 3001, 394-399(1997).

[32] C. Henry. Performance of distributed feedback lasers designed to favor the energy gap mode. IEEE J. Quantum Electron., 21, 1913-1918(1985).

[33] K. Nishi, T. Kageyama, M. Yamaguchi, Y. Maeda, K. Takemasa, T. Yamamoto, M. Sugawara, Y. Arakawa. Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission. J. Cryst. Growth, 378, 459-462(2013).

[34] H. Lu, C. Blaauw, T. Makino. Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers. J. Lightwave Technol., 14, 851-859(1996).

[35] K. Takada, Y. Tanaka, T. Matsumoto, M. Ekawa, Y. Nakata, T. Yamamoto, M. Sugawara, Y. Arakawa. Temperature-stable 10.3-Gb/s operation of 1.3-μm quantum-dot DFB lasers with GaInP/GaAs gratings. National Fiber Optic Engineers Conference, JWA28(2009).

[36] L. A. Coldren, S. W. Corzine, M. L. Mashanovitch. Diode Lasers and Photonic Integrated Circuits, 218(2012).

[37] Y.-G. Zhou, C. Zhou, C.-F. Cao, J.-B. Du, Q. Gong, C. Wang. Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge. Opt. Express, 25, 28817-28824(2017).

[38] F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan. Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm. IEEE J. Sel. Top. Quantum Electron., 13, 111-124(2007).

[39] D. Arsenijević, D. Bimberg. Quantum-dot lasers for 35 Gbit/s pulse-amplitude modulation and 160 Gbit/s differential quadrature phase-shift keying. Proc. SPIE, 9892, 98920S(2016).

[40] Y. He, Z. Zhang, Z. Lv, T. Yang, D. Lu, L. Zhao. 10-Gbps 20-km feedback-resistant transmission using directly modulated quantum-dot lasers. IEEE Photon. Technol. Lett., 32, 1353-1356(2020).

[41] D. Inoue, D. Jung, J. Norman, Y. Wan, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon. Opt. Express, 26, 7022-7033(2018).

[42] A. Fiore, A. Markus. Differential gain and gain compression in quantum-dot lasers. IEEE J. Quantum Electron., 43, 287-294(2007).

[43] C. Hantschmann, P. P. Vasil’ev, A. Wonfor, S. Chen, M. Liao, A. J. Seeds, H. Liu, R. V. Penty, I. H. White. Understanding the bandwidth limitations in monolithic 1.3 μm InAs/GaAs quantum dot lasers on silicon. J. Lightwave Technol., 37, 949-955(2018).

[44] A. Martinez, Y. Li, L. F. Lester, A. L. Gray. Microwave frequency characterization of undoped and p-doped quantum dot lasers. Appl. Phys. Lett., 90, 251101(2007).

[45] F. Grillot, B. Dagens, J.-G. Provost, H. Su, L. F. Lester. Gain compression and above-threshold linewidth enhancement factor in 1.3-μm InAs-GaAs quantum-dot lasers. IEEE J. Quantum Electron., 44, 946-951(2008).

[46] W. W. Chow, Z. Zhang, J. C. Norman, S. Liu, J. E. Bowers. On quantum-dot lasing at gain peak with linewidth enhancement factor αH=0. APL Photon., 5, 026101(2020).

[47] Z. Zhang, D. Jung, J. C. Norman, W. W. Chow, J. E. Bowers. Linewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications. IEEE J. Sel. Top. Quantum Electron., 25, 1900509(2019).

[48] M. Osinski, J. Buus. Linewidth broadening factor in semiconductor lasers–an overview. IEEE J. Quantum Electron., 23, 9-29(1987).

[49] G. Liu, X. Jin, S.-L. Chuang. Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique. IEEE Photon. Technol. Lett., 13, 430-432(2001).

[50] J.-G. Provost, F. Grillot. Measuring the chirp and the linewidth enhancement factor of optoelectronic devices with a Mach–Zehnder interferometer. IEEE Photon. J., 3, 476-488(2011).

[51] J.-G. Provost, A. Martinez, A. Shen, A. Ramdane. Single step measurement of optical transmitters Henry factor using sinusoidal optical phase modulations. Opt. Express, 19, 21396-21403(2011).

[52] R. Schimpe, J. Bowers, T. L. Koch. Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique. Electron. Lett., 22, 453-454(1986).

[53] I. Kang, C. Dorrer. Method of optical pulse characterization using sinusoidal optical phase modulations. Opt. Lett., 32, 2538-2540(2007).

[54] F. Favre. Theoretical analysis of external optical feedback on DFB semiconductor lasers. IEEE J. Quantum Electron., 23, 81-88(1987).

[55] F. Grillot. On the effects of an antireflection coating impairment on the sensitivity to optical feedback of AR/HR semiconductor DFB lasers. IEEE J. Quantum Electron., 45, 720-729(2009).

[56] B. Dong, J. Duan, C. Shang, H. Huang, A. B. Sawadogo, D. Jung, Y. Wan, J. E. Bowers, F. Grillot. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55-μm InP-based InAs quantum dash lasers. Appl. Phys. Lett., 115, 091101(2019).

[57] J. Mørk, B. Tromborg, P. L. Christiansen. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis. IEEE J. Quantum Electron., 24, 123-133(1988).

[58] Y. Takiguchi, H. Fujino, J. Ohtsubo. Experimental synchronization of chaotic oscillations in externally injected semiconductor lasers in a low-frequency fluctuation regime. Opt. Lett., 24, 1570-1572(1999).

[59] S. Azouigui, B. Dagens, F. Lelarge, J. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, A. Ramdane. Tolerance to optical feedback of 10-Gb/s quantum-dash-based lasers emitting at 1.51 μm. IEEE Photon. Technol. Lett., 19, 1181-1183(2007).

[60] S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, D. Make, O. Le Gouezigou, A. Accard, A. Martinez, K. Merghem, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Q. Zou, A. Ramdane. Optical feedback tolerance of quantum-dot-and quantum-dash-based semiconductor lasers operating at 1.55 μm. IEEE J. Sel. Top. Quantum Electron., 15, 764-773(2009).