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    Journals >Photonics Research >Volume 7 >Issue 9 >Page B66 > Article
    • Photonics Research
    • Vol. 7, Issue 9, B66 (2019)
    Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array
    Liang Zhang1、2, Yanan Guo1、2、3、4, Jianchang Yan1、2、3、4、6、*, Qingqing Wu1、2, Yi Lu1、2, Zhuohui Wu1、2, Wen Gu1、2, Xuecheng Wei1、2、3、4, Junxi Wang1、2、3、4、5、*, and Jinmin Li1、2、3、4
    Author Affiliations
  • 1Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
  • 4State Key Laboratory of Solid-State Lighting, Beijing 100083, China
  • 5e-mail: jxwang@semi.ac.cn
  • 6e-mail: yanjc@semi.ac.cn
    • show less
    DOI: 10.1364/PRJ.7.000B66 Cite this Article Set citation alerts
    Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, Jinmin Li. Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array[J]. Photonics Research, 2019, 7(9): B66 Copy Citation Text show less
    References

    [1] D. Li, K. Jiang, X. Sun, C. Guo. AlGaN photonics: recent advances in materials and ultraviolet devices. Adv. Opt. Photon., 10, 43-110(2018).

    [2] J. M. Li, Z. Liu, Z. Q. Liu, J. C. Yan, T. B. Wei, X. Y. Yi, J. X. Wang. Advances and prospects in nitrides based light-emitting-diodes. J. Semicond., 37, 061001(2016).

    [3] T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, H. Hirayama. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency. Appl. Phys. Express, 10, 031002(2017).

    [4] M. Kneissl, T.-Y. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics, 13, 233-244(2019).

    [5] Y. Guo, J. Yan, Y. Zhang, J. Wang, J. Li. Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale. J. Nanophoton., 12, 043510(2018).

    [6] R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, X. Li. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations. Photon. Res., 6, 457-462(2018).

    [7] B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, M. S. Alias. Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices. J. Nanophoton., 12, 043508(2018).

    [8] W. Guo, Z. Yang, J. Li, X. Yang, Y. Zhang, J. Wang, K. W. A. Chee, P. Gao, J. Ye. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array. Nanoscale, 9, 15477-15483(2017).

    [9] W. Chen, X. Wen, J. Yang, M. Latzel, R. Patterson, S. Huang, S. Shrestha, B. Jia, D. J. Moss, S. Christiansen, G. Conibeer. Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts. Nanoscale, 10, 5358-5365(2018).

    [10] P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, J. Li. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes. Opt. Express, 22, 320-327(2014).

    [11] M. L. Kuo, Y. S. Kim, M. L. Hsieh, S. Y. Lin. Efficient and directed nano-LED emission by a complete elimination of transverse-electric guided modes. Nano Lett., 11, 476-481(2011).

    [12] Z. Mi, S. Zhao, S. Y. Woo, M. Bugnet, M. Djavid, X. Liu, J. Kang, X. Kong, W. Ji, H. Guo, Z. Liu, G. A. Botton. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. J. Phys. D, 49, 364006(2016).

    [13] H. Sun, M. K. Shakfa, M. M. Muhammed, B. Janjua, K.-H. Li, R. Lin, T. K. Ng, I. S. Roqan, B. S. Ooi, X. Li. Surface-passivated AlGaN nanowires for enhanced luminescence of ultraviolet light emitting diodes. ACS Photon., 5, 964-970(2017).

    [14] B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, B. S. Ooi. Droop-free AlxGa1−xN/AlyGa1−yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Opt. Express, 25, 1381-1390(2017).

    [15] J. Kim, U. Choi, J. Pyeon, B. So, O. Nam. Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method. Sci. Rep., 8, 935(2018).

    [16] P. M. Coulon, G. Kusch, R. W. Martin, P. A. Shields. Deep-UV emission from highly-ordered AlGaN/AlN core-shell nanorods. ACS Appl. Mater. Interfaces, 10, 33441-33449(2018).

    [17] Z. Zhuang, X. Guo, B. Liu, F. Hu, J. Dai, Y. Zhang, Y. Li, T. Tao, T. Zhi, Z. Xie, H. Ge, X. Wang, M. Xiao, T. Wang, Y. Shi, Y. Zheng, R. Zhang. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27, 015301(2016).

    [18] J. Mickevičius, Ž. Podlipskas, R. Aleksiejūnas, A. Kadys, J. Jurkevičius, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, R. Gaska. Nonradiative recombination, carrier localization, and emission efficiency of AlGaN epilayers with different Al content. J. Electron. Mater., 44, 4706-4709(2015).

    [19] L. Zhang, J. Yan, Q. Wu, Y. Guo, T. Wei, Z. Liu, G. Yuan, X. Wei, Y. Zhang, J. Li, J. Wang. Deep ultraviolet light-emitting diodes with improved performance on nanoporous template. Opt. Express, 27, 4917-4926(2019).

    [20] B. K. Ridley. Kinetics of radiative recombination in quantum wells. Phys. Rev. B, 41, 12190-12196(1990).

    [21] Y.-J. Lee, C.-H. Chiu, C. C. Ke, P. C. Lin, T.-C. Lu, H.-C. Kuo, S.-C. Wang. Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate. IEEE J. Sel. Top. Quantum Electron., 15, 1137-1143(2009).

    [22] T. Oto, R. G. Banal, M. Funato, Y. Kawakami. Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells. Phys. Status Solidi C, 7, 1909-1912(2010).

    [23] D. Y. Fu, R. Zhang, B. G. Wang, Z. Zhang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, G. Edwards. Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films. Appl. Phys. Lett., 94, 191907(2009).

    [24] Z. Zhuang, X. Guo, G. Zhang, B. Liu, R. Zhang, T. Zhi, T. Tao, H. Ge, F. Ren, Z. Xie, Y. Zheng. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography. Nanotechnology, 24, 405303(2013).

    [25] Y. S. Park, G. Lee, M. J. Holmes, C. C. Chan, B. P. Reid, J. A. Alexander-Webber, R. J. Nicholas, R. A. Taylor, K. S. Kim, S. W. Han, W. Yang, Y. Jo, J. Kim, H. Im. Surface-effect-induced optical bandgap shrinkage in GaN nanotubes. Nano Lett., 15, 4472-4476(2015).

    [26] C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, B. Shen. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers. Sci. Rep., 5, 13046(2015).

    [27] Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, Y. Kawakami. Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy. J. Appl. Phys., 117, 075701(2015).

    [28] J.-C. Blancon, H. Tsai, W. Nie, C. C. Stoumpos, L. Pedesseau, C. Katan, M. Kepenekian, C. M. M. Soe, K. Appavoo, M. Y. Sfeir, S. Tretiak, P. M. Ajayan, M. G. Kanatzidis, J. Even, J. J. Crochet, A. D. Mohite. Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites. Science, 355, 1288-1292(2017).

    [29] W. Y. Liang. Excitons. Phys. Educ., 5, 226-228(1970).

    [30] S. Zhao, M. Djavid, Z. Mi. Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon. Nano Lett., 15, 7006-7009(2015).

    [31] K. H. Lee, H. J. Park, S. H. Kim, M. Asadirad, Y. T. Moon, J. S. Kwak, J. H. Ryou. Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes. Opt. Express, 23, 20340-20349(2015).

    [32] A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, J. Li. Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode. Appl. Phys. Lett., 105, 251103(2014).

    [33] H.-Y. Ryu. Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures. Ryu Nanoscale Res. Lett., 9, 7(2014).

    [34] Z. Liu, K. Wang, X. Luo, S. Liu. Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing. Opt. Express, 18, 9398-9412(2010).

    [35] H.-Y. Ryu, I.-G. Choi, H.-S. Choi, J.-I. Shim. Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl. Phys. Express, 6, 062101(2013).

    [36] Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, J. Li. Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method. 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (Sslchina: Ifws), 127-130(2016).

    CLP Journals

    [1] Xiaohang Li, Russell D. Dupuis, Tim Wernicke. Semiconductor UV photonics: feature introduction[J]. Photonics Research, 2019, 7(12): SUVP1

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    Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, Jinmin Li. Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array[J]. Photonics Research, 2019, 7(9): B66
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