[1] Salahuddin S, Ni K and Datta S 2018 The era of hyper-scaling in electronics Nat. Electron. 1 442–50
[2] Moore G E 1965 Cramming more components onto integrated circuits Electronics 38 114–17
[3] Chu M, Sun Y K, Aghoram U and Thompson S E 2009 Strain: a solution for higher carrier mobility in nanoscale MOSFETs Annu. Rev. Mater. Res. 39 203–29
[4] Fischetti M V and Laux S E 1996 Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys J. Appl. Phys. 80 2234–52
[5] Auth C 2008 45 nm high-k + metal gate strain-enhanced transistors Proc. 2008 Symp. on VLSI Technology (Honolulu, HI: IEEE) pp 128–9
[6] Hisamoto D et al 2000 FinFET-a self-aligned double-gate MOSFET scalable to 20 nm IEEE Trans. Electron. Dev. 47 2320–5
[7] Wagner C and Harned N 2010 Lithography gets extreme Nat. Photon. 4 24–6
[8] Yen A, Meiling H and Benschop J 2019 Enabling manufacturing of sub-10 nm generations of integrated circuits with EUV lithography Proc. 2019 Electron Devices Technology and Manufacturing Conf. (Singapore: IEEE) pp 475–7
[9] Lu W and Lieber C M 2007 Nanoelectronics from the bottom up Nat. Mater. 6 841–50
[10] Mackus A J M, Merkx M J M and Kessels W M M 2019 From the bottom-up: toward area-selective atomic layer deposition with high selectivity Chem. Mater. 31 2–12
[11] Clark R, Tapily K, Yu K H, Hakamata T, Consiglio S et al 2018 Perspective: new process technologies required for future devices and scaling APL Mater. 6 058203
[12] Lu J L, Elam J W and Stair P C 2016 Atomic layer deposition—sequential self-limiting surface reactions for advanced catalyst ‘bottom-up’ synthesis Surf. Sci. Rep. 71 410–72
[13] Mackus A J M, Bol A A and Kessels W M M 2014 The use of atomic layer deposition in advanced nanopatterning Nanoscale 6 10941–60
[14] Barth J V, Costantini G and Kern K 2005 Engineering atomic and molecular nanostructures at surfaces Nature 437 671–9
[15] Ternes M, Lutz C P, Hirjibehedin C F, Giessibl F J and Heinrich A J 2008 The force needed to move an atom on a surface Science 319 1066–9
[16] Chu S 1991 Laser manipulation of atoms and particles Science 253 861–6
[17] Cirac Z P and Zoller P 2003 Physics: how to manipulate cold atoms Science 301 176–7
[18] Feynman R P 1959 There’s plenty of room at the bottom American Physical Society Meeting (Pasadena, CA)
[19] Rosato D V, Rosato D V and Rosato M G 2000 Injection Molding Handbook (Boston, MA: Springer)
[20] Ngo T D, Kashani A, Imbalzano G, Nguyen K T Q and Hui D 2018 Additive manufacturing (3D printing): a review of materials, methods, applications and challenges Composites B 143 172–96
[21] Whitesides G M and Grzybowski B 2002 Self-assembly at all scales Science 295 2418–21
[22] Pavliˇcek N and Gross L 2017 Generation, manipulation and characterization of molecules by atomic force microscopy Nat. Rev. Chem. 1 5
[23] Fang F Z 2015 Suggestions to promoting the implements of ‘manufacturing III’ People’s Daily p 7 (in Chinese)
[24] Fang F Z 2015 ‘Manufacturing III’ is the strategic choice for manufacturing development People’s Tribune pp 59–61 (in Chinese)
[25] Mahan J E 2000 Physical Vapor Deposition of Thin Films (New York: Wiley)
[26] Sherman A 1987 Chemical Vapor Deposition for Microelectronics: Principles, Technology, and Applications (Park Ridge, IL: Noyes Publications)
[27] Park J H and Sudarshan T S 2011 Chemical Vapor Deposition (Materials Park, OH: ASM International)
[28] Johnson R W, Hultqvist A and Bent S F 2014 A brief review of atomic layer deposition: from fundamentals to applications Mater. Today 17 236–46
[29] George S M 2010 Atomic layer deposition: an overview Chem. Rev. 110 111–31
[30] Gregorczyk K and Knez M 2016 Hybrid nanomaterials through molecular and atomic layer deposition: top down, bottom up, and in-between approaches to new materials Prog. Mater. Sci. 75 1–37
[31] Mackus A J M, Schneider J R, MacIsaac C, Baker J G and Bent S F 2019 Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review Chem. Mater. 31 1142–83
[32] Rossnagel S M and Kim H 2001 From PVD to CVD to ALD for interconnects and related applications Proc. IEEE 2001 Int. Interconnect Technology Conf. (Burlingame, CA: IEEE) pp 3–5
[33] Rim K et al 2003 Strained Si CMOS (SS CMOS) technology: opportunities and challenges Solid-State Electron. 47 1133–9
[34] Iwai H 2015 Future of nano CMOS technology Solid-State Electron. 112 56–67
[35] Shiu W, Liu H J, Wu J S, Tseng T L, Liao C T, Liao C M, Liu J and Wang T et al 2009 Advanced self-aligned double patterning development for sub-30-nm DRAM manufacturing Proc. SPIE 7274 72740E
[36] Hennessy W A, Ghezzo M, Wilson R H and Bakhru H 1988 Selective CVD tungsten on silicon implanted SiO2 J. Electrochem. Soc. 135 1730–4
[37] Joyce B D and Baldrey J A 1962 Selective epitaxial deposition of silicon Nature 195 485–6
[38] Shaw D W 1966 Selective epitaxial deposition of gallium arsenide in holes J. Electrochem. Soc. 113 904
[39] Ludwig C and Meyer S 2011 Double patterning for memory ICs Recent Advances in Nanofabrication Techniques and Applications ed B Cui (Rijeka: IntechOpen) pp 417–32
[40] Jeong E, Kim J, Choi K, Lee M, Lee D, Kim M and Park C 2008 Double patterning in lithography for 65 nm node with oxidation process Proc. SPIE 6924 692424
[41] Yaegashi H 2016 Pattern fidelity control in multi-patterning towards 7 nm node Proc. 16th Int. Conf. on Nanotechnology (Sendai, Japan: IEEE) pp 452–5
[42] Yaegashi H, Oyama K, Yamauchi S, Hara A, Natori S and Yamato M 2014 Enabled scaling capability with self-aligned multiple patterning process J. Photopolym. Sci. Technol. 27 491–6
[43] Gardner D S, Onuki J, Kudoo K and Misawa Y 1991 Encapsulated copper interconnection devices using sidewall barriers Proc. 8th Int. IEEE VLSI Multilevel Interconnection Conf. (Santa Clara, CA: IEEE) pp 99–108
[44] Chen Z et al 2004 Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology Appl. Phys. Lett. 84 2442–4
[45] Tan T L, Gan C L, Du A Y and Cheng C K 2009 Effect of Ta migration from sidewall barrier on leakage current in Cu/SiOCH low-k dielectrics J. Appl. Phys. 106 043517
[46] Li Y L et al 2014 Reliability challenges for barrier/liner system in high aspect ratio through silicon vias Microelectron. Reliab. 54 1949–52
[47] Shkondin E, Leandro L, Malureanu R, Jensen F, Rozlosnik N and Lavrinenko A V 2015 Ultra-thin metal and dielectric layers for nanophotonic applications Proc. 17th Int. Conf. on Transparent Optical Networks (Budapest: IEEE) pp 1–4
[48] Ozatay O et al 2008 Sidewall oxide effects on spin-torqueand magnetic-field-induced reversal characteristics of thin-film nanomagnets Nat. Mater. 7 567–73
[49] Chen X et al 2013 Atomic layer lithography of wafer-scale nanogap arrays for extreme confinement of electromagnetic waves Nat. Commun. 4 2361
[50] Park H R, Chen X S, Nguyen N C, Peraire J and Oh S H 2015 Nanogap-enhanced terahertz sensing of 1 nm thick (λ/106) dielectric films ACS Photonics 2 417–24
[51] Yoo D, Gurunatha K L, Choi H K, Mohr D A, Ertsgaard C T, Gordon R and Oh S-H 2018 Low-power optical trapping of nanoparticles and proteins with resonant coaxial nanoaperture using 10 nm gap Nano Lett. 18 3637–42
[52] Yoo D et al 2018 High-contrast infrared absorption spectroscopy via mass-produced coaxial zero-mode resonators with sub-10 nm gaps Nano Lett. 18 1930–6
[53] Thelander C et al 2006 Nanowire-based one-dimensional electronics Mater. Today 9 28–35
[54] Li Y, Qian F, Xiang J and Lieber C M 2006 Nanowire electronic and optoelectronic devices Mater. Today 9 18–27
[55] Larrieu G and Han X L 2013 Vertical nanowire array-based field effect transistors for ultimate scaling Nanoscale 5 2437–41
[56] Lee B H, Kang M H, Ahn D C, Park J Y, Bang T, Jeon S-B, Hur J, Lee D and Choi Y-K 2015 Vertically integrated multiple nanowire field effect transistor Nano Lett. 15 8056–61
[57] Tian B Z, Kempa T J and Lieber C M 2009 Single nanowire photovoltaics Chem. Soc. Rev. 38 16–24
[58] Garnett E C, Brongersma M L, Cui Y and McGehee M D 2011 Nanowire solar cells Annu. Rev. Mater. Res. 41 269–95
[59] Xu S, Qin Y, Xu C, Wei Y G, Yang R S and Wang Z L 2010 Self-powered nanowire devices Nat. Nanotechnol. 5 366–73
[60] Zheng G F, Patolsky F, Cui Y, Wang W U and Lieber C M 2005 Multiplexed electrical detection of cancer markers with nanowire sensor arrays Nat. Biotechnol. 23 1294–301
[61] Heath J R 2008 Superlattice nanowire pattern transfer (SNAP) Acc. Chem. Res. 41 1609–17
[62] Melosh N A, Boukai A, Diana F, Gerardot B, Badolato A, Petroff P M and Heath J R 2003 Ultrahigh-density nanowire lattices and circuits Science 300 112–5
[63] Lane A P et al 2017 Directed self-assembly and pattern transfer of five nanometer block copolymer lamellae ACS Nano 11 7656–65
[64] Kim J H, Jeong J H, Lee S H, Kim K, Yoon J S, Choi D S and Yoo Y E 2018 The influence of contact material on lateral wet-etching of nickel thin films in lamellae structure Thin Solid Films 660 19–22
[65] Qin L D, Park S, Huang L and Mirkin C A 2005 On-wire lithography Science 309 113–5
[66] Chen X D, Jeon Y M, Jang J W, Qin L D, Huo F W, Wei W and Mirkin C A 2008 On-wire lithography-generated molecule-based transport junctions: a new testbed for molecular electronics J. Am. Chem. Soc. 130 8166–8
[67] Mohaddes-Ardabili L et al 2004 Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition Nat. Mater. 3 533–8
[68] Chen A P, Bi Z X, Jia Q X, MacManus-Driscoll J L and Wang H Y 2013 Microstructure, vertical strain control and tunable functionalities in self-assembled, vertically aligned nanocomposite thin films Acta. Mater. 61 2783–92
[69] MacManus-Driscoll J L, Zerrer P, Wang H Y, Yang H, Yoon J, Fouchet A, Yu R, Blamire M G and Jia Q 2008 Strain control and spontaneous phase ordering in vertical nanocomposite heteroepitaxial thin films Nat. Mater. 7 314–20
[70] Zhang W R, Chen A P, Bi Z X, Jia Q X, MacManus-Driscoll J L and Wang H 2014 Interfacial coupling in heteroepitaxial vertically aligned nanocomposite thin films: from lateral to vertical control Curr. Opin. Solid State Mater. Sci. 18 6–18
[71] Reddy M S P, Im K S, Lee J H, Caulmione R and Cristoloveanu S 2019 Trap and 1/f -noise effects at the surface and core of GaN nanowire gate-all-around FET structure Nano Res. 12 809–14
[72] Xu B, Kaneko T and Kato T 2019 Improvement in growth yield of single-walled carbon nanotubes with narrow chirality distribution by pulse plasma CVD Front. Chem. Sci. Eng. 13 485–92
[73] Ali H, Ismail N, Amin M S and Mekewi M 2018 Decoration of vertically aligned TiO2 nanotube arrays with WO3 particles for hydrogen fuel production Front. Energy 12 249–58
[74] Zhang J K, Gao Z, Wang S, Wang G F, Gao X F, Zhang B, Xing S, Zhao S and Qin Y 2019 Origin of synergistic effects in bicomponent cobalt oxide-platinum catalysts for selective hydrogenation reaction Nat. Commun. 10 4166
[75] Huang B, Yang W J, Wen Y W, Shan B and Chen R 2015 Co3O4-modified TiO2 nanotube arrays via atomic layer deposition for improved visible-light photoelectrochemical performance ACS Appl. Mater. Interfaces 7 422–31
[76] Nam S W, Rooks M J, Kim K B and Rossnagel S M 2009 Ionic field effect transistors with sub-10 nm multiple nanopores Nano Lett. 9 2044–8
[77] Sainiemi L, Viheri‥al‥a J, Sikanen T, Laukkanen J and Niemi T 2010 Nanoperforated silicon membranes fabricated by UV-nanoimprint lithography, deep reactive ion etching and atomic layer deposition J. Micromech. Microeng. 20 077001
[78] Pangracious V, Marrakchi Z and Mehrez H 2015 Three-dimensional integration: a more than Moore technology Three-Dimensional Design Methodologies for Tree-Based FPGA Architecture ed V Pangracious, Z Marrakchi and H Mehrez (Cham: Springer) pp 13–41
[79] Sander M S, C?ot’e M J, Gu W, Kile B M and Tripp C P 2004 Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates Adv. Mater. 16 2052–7
[80] Ras R H, Kemell M, De Wit J, Ritala M, ten Brinke G, Leskel‥a M and Ikkala O 2007 Hollow inorganic nanospheres and nanotubes with tunable wall thicknesses by atomic layer deposition on self-assembled polymeric templates Adv. Mater. 19 102–6
[81] Choi W B, Cheong B H, Kim J J, Chu J and Bae E 2003 Selective growth of carbon nanotubes for nanoscale transistors Adv. Funct. Mater. 13 80–4
[82] Loo R et al 2017 Processing technologies for advanced Ge devices ECS J. Solid State Sci. Technol. 6 P14–20
[83] Merckling C et al 2013 Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique J. Appl. Phys. 114 033708
[84] Wang G et al 2010 Selective area growth of InP in shallow-trench- isolated structures on off-axis Si(001) substrates J. Electrochem. Soc. 157 H1023–8
[85] Schmid H, Borg M, Moselund K, Gignac L, Breslin C M, Bruley J, Cutaia D and Riel H 2015 Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si Appl. Phys. Lett. 106 233101
[86] Borg M et al 2014 Vertical III–V nanowire device integration on Si(100) Nano Lett. 14 1914–20
[87] Tsubouchi K and Masu K 1993 Area-selective CVD of metals Thin Solid Films 228 312–8
[88] Awaya N and Arita Y 1992 Double-level copper interconnections using selective copper CVD J. Electron. Mater. 21 959–64
[89] Liu G Y, Zhao H P, Zhang J, Park J H, Mawst L J and Tansu N 2011 Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography Nanoscale Res. Lett. 6 342
[90] Park K J and Parsons G N 2006 Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures Appl. Phys. Lett. 89 043111
[91] Coffey B M, Lin E L, Chen P Y and Ekerdt J G 2019 Area-selective atomic layer deposition of crystalline BaTiO3 Chem. Mater. 31 5558–65
[92] F‥arm E, Kemell M, Ritala M and Leskel? M 2008 Selective-area atomic layer deposition using poly (methyl methacrylate) films as mask layers J. Phys. Chem. C 112 15791–5
[93] Mettry M, Hess A E, Goetting I, Arellano N, Friz A, Tek A and Wojtecki R J 2019 Extending the compositional diversity of films in area selective atomic layer deposition through chemical functionalities J. Vac. Sci. Technol. A 37 020923
[94] Zhang Z Z, Dwyer T, Sirard S M and Ekerdt J G 2019 Area-selective atomic layer deposition of cobalt oxide to generate patterned cobalt films J. Vac. Sci. Technol. A 37 020905
[95] F‥arm E, Kemell M, Santala E, Ritala M and Leskel‥a M 2010 Selective-area atomic layer deposition using poly (vinyl pyrrolidone) as a passivation layer J. Electrochem. Soc. 157 K10–K14
[96] Vervuurt R H, Sharma A, Jiao Y Q, Kessels W E and Bol A A 2016 Area-selective atomic layer deposition of platinum using photosensitive polyimide Nanotechnology 27 405302
[97] Park K S, Seo E K, Do Y R, Kim K and Sung M M 2006 Light stamping lithography: microcontact printing without inks J. Am. Chem. Soc. 128 858–65
[98] Mullings M N, Lee H B R, Marchack N, Jiang X R, Chen Z B, Gorlin Y, Lin K-P and Bent S F 2010 Area selective atomic layer deposition by microcontact printing with a water-soluble polymer J. Electrochem. Soc. 157 D600–4
[99] Suresh V, Huang M S, Srinivasan M P, Guan C, Fan H J and Krishnamoorthy S 2012 Robust, high-density zinc oxide nanoarrays by nanoimprint lithography-assisted area-selective atomic layer deposition J. Phys. Chem. C 116 23729–34
[100] Haider A, Yilmaz M, Deminskyi P, Eren H and Biyikli N 2016 Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers RSC Adv 6 106109–19
[101] Hua Y M, King W P and Henderson C L 2008 Nanopatterning materials using area selective atomic layer deposition in conjunction with thermochemical surface modification via heated AFM cantilever probe lithography Microelectron. Eng. 85 934–6
[102] Bobb-Semple D, Nardi K L, Draeger N, Hausmann D M and Bent S F 2019 Area-selective atomic layer deposition assisted by self-assembled monolayers: a comparison of Cu, Co, W, and Ru Chem. Mater. 31 1635–45
[103] Fang M and Ho J C 2015 Area-selective atomic layer deposition: conformal coating, subnanometer thickness control, and smart positioning ACS Nano 9 8651–4
[104] Prasittichai C, Pickrahn K L, Hashemi F S M, Bergsman D S and Bent S F 2014 Improving area-selective molecular layer deposition by selective SAM removal ACS Appl. Mater. Interfaces 6 17831–6
[105] Closser R G, Bergsman D S, Ruelas L, Hashemi F S M and Bent S F 2017 Correcting defects in area selective molecular layer deposition J. Vac. Sci. Technol. A 35 031509
[106] Pasquali M, De, Gendt S and Armini S 2019 Area-selective deposition by a combination of organic film passivation and atomic layer deposition ECS Trans. 92 25–32
[107] Hashemi F S M, Birchansky B R and Bent S F 2016 Selective deposition of dielectrics: limits and advantages of alkanethiol blocking agents on metal-dielectric patterns ACS Appl. Mater. Interfaces 8 33264–72
[108] Hashemi F S M and Bent S F 2016 Sequential regeneration of self-assembled monolayers for highly selective atomic layer deposition Adv. Mater. Interfaces 3 1600464
[109] Lecordier L, Herregods S and Armini S 2018 Vapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by in situ spectroscopic ellipsometry J. Vac. Sci. Technol. A 36 031605
[110] Khan R et al 2018 Area-selective atomic layer deposition using Si precursors as inhibitors Chem. Mater. 30 7603–10
[111] Zyulkov I, Krishtab M, De Gendt S and Armini S 2017 Selective Ru ALD as a catalyst for sub-seven-nanometer bottom-up metal interconnects ACS Appl. Mater. Interfaces 9 31031–41
[112] Mameli A, Merkx M J M, Karasulu B, Roozeboom F, Kessels W M M and Mackus A J M 2017 Area-selective atomic layer deposition of SiO2 using acetylacetone as a chemoselective inhibitor in an ABC-type cycle ACS Nano 11 9303–11
[113] Lin R Z, Cheng K Y, Pan F M and Sheu J T 2017 Selective deposition of multiple sensing materials on Si nanobelt devices through plasma-enhanced chemical vapor deposition and device-localized joule heating ACS Appl. Mater. Interfaces 9 39935–9
[114] Kim W H et al 2016 A process for topographically selective deposition on 3D nanostructures by ion implantation ACS Nano 10 4451–8
[115] Vincent B, Witters L, Richard O, Hikavyy A, Bender H, Loo R, Caymax M and Thean A 2012 Selective growth of strained Ge channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and FIN p-FET ECS Trans. 50 39–45
[116] Vellianitis G, Van Dal M J H, Duriez B, Lee T L, Passlack M, Wann C H and Diaz C H 2013 High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates J. Cryst. Growth 383 9–11
[117] Izumi S, Miyake T, Sakai S and Ohta H 2005 Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure Mater. Sci. Eng. A 395 62–9
[118] Collaert N et al 2015 Ultimate nano-electronics: new materials and device concepts for scaling nano-electronics beyond the Si roadmap Microelectron. Eng. 132 218–25
[119] Lai C C, Li L Y, Wang W L, Huang T B, Chien H J and Ying T H 2016 The improvement of MOSFET performance by the optimization of STI HDP-CVD integration process Microelectron. Eng. 149 9–13
[120] Peddeti S, Ong P, Leunissen L H A and Babu S V 2012 Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersions Microelectron. Eng. 93 61–6
[121] Eneman G et al 2010 P+/n junction leakage in thin selectively grown Ge-in-STI substrates Thin Solid Films 518 2489–92
[122] Wang G et al 2010 Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Thin Solid Films 518 2538–41
[123] Wang G, Rosseel E, Loo R, Favia P, Bender H, Caymax M, Heyns M M and Vandervorst W 2010 Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates J. Appl. Phys. 108 123517
[124] Hertenberger S, Rudolph D, Bichler M, Finley J J, Abstreiter G and Koblmüller G 2010 Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy J. Appl. Phys. 108 114316
[125] Lee S et al 2018 High performance InGaAs gate-all-around nanosheet FET on Si using template assisted selective epitaxy Proc. 2018 IEEE Int. Electron Devices Meeting (San Francisco, CA: IEEE) pp 39.5.1–4
[126] Kotani H, Tsutsumi T, Komori J and Nagao S 1987 A highly reliable selective CVD-W utilizing SiH4 reduction for VLSI contacts Proc. Int. Electron Devices Meeting (Washington, DC: IEEE) pp 217–20
[127] Zheng J F et al 2015 Selective Co growth on Cu for void-free via fill Proc. IEEE Int. Interconnect Technology Conf. and 2015 IEEE Materials for Advanced Metallization Conf. (Grenoble: IEEE) pp 265–8
[128] Jiang Y et al 2016 Development of electroless Co via-prefill to enable advanced BEOL metallization and via resistance reduction Proc. 2016 IEEE Int. Interconnect Technology Conf./Advanced Metallization Conf. (San Jose, CA: IEEE) pp 111–3
[129] Van Der Veen M H et al 2015 Cobalt bottom-up contact and via prefill enabling advanced logic and DRAM technologies Proc. 2015 IEEE Int. Interconnect Technology Conf. and 2015 IEEE Materials for Advanced Metallization Conf. (Grenoble: IEEE) pp 25–8
[130] Gladfelter W L 1993 Selective metalization by chemical vapor deposition Chem. Mater. 5 1372–88
[131] Pujari S P, Scheres L, Marcelis A T M and Zuilhof H 2014 Covalent surface modification of oxide surfaces Angew. Chem. Int. Ed. 53 6322–56
[132] Gates B D, Xu Q B, Stewart M, Ryan D, Willson C G and Whitesides G M 2005 New approaches to nanofabrication: molding, printing, and other techniques Chem. Rev. 105 1171–96
[133] Gates B D 2005 Nanofabrication with molds & stamps Mater. Today 8 44–9
[134] Guo L, Qin X D and Zaera F 2016 Chemical treatment of low-k dielectric surfaces for patterning of thin solid films in microelectronic applications ACS Appl. Mater. Interfaces 8 6293–300
[135] Ballav N, Schilp S and Zharnikov M 2008 Electron-beam chemical lithography with aliphatic self-assembled monolayers Angew. Chem. Int. Ed. 47 1421–4
[136] Turchanin A, Schnietz M, El-Desawy M, Solak H H, David C and G?lzh‥auser A 2007 Fabrication of molecular nanotemplates in self-assembled monolayers by extreme-ultraviolet-induced chemical lithography Small 3 2114–9
[137] Lee W, Dasgupta N P, Trejo O, Lee J R, Hwang J, Usui T and Prinz F B 2010 Area-selective atomic layer deposition of lead sulfide: nanoscale patterning and DFT simulations Langmuir 26 6845–52
[138] Lee H B R and Bent S F 2012 Nanopatterning by area-selective atomic layer deposition Atomic Layer Deposition of Nanostructured Materials ed N Pinna and M Knez (Chichester: Wiley) pp 193–225
[139] Chen R and Bent S F 2006 Chemistry for positive pattern transfer using area-selective atomic layer deposition Adv. Mater. 18 1086–90
[140] Minaye Hashemi F S, Prasittichai C and Bent S F 2015 Self-correcting process for high quality patterning by atomic layer deposition ACS Nano 9 8710–7
[141] Spampinato V, Armini S, Franquet A, Conard T, van der Heide P and Vandervorst W 2019 Self-focusing SIMS: a metrology solution to area selective deposition Appl. Surf. Sci. 476 594–9
[142] Liu X, Zhu Q Q, Lang Y, Cao K, Chu S Q, Shan B and Chen R 2017 Oxide-nanotrap-anchored platinum nanoparticles with high activity and sintering resistance by area-selective atomic layer deposition Angew. Chem. Int. Ed. 56 1648–52
[143] Huang J, Lee M, Lucero A, Cheng L X and Kim J 2014 Area-selective ALD of TiO2 nanolines with electron-beam lithography J. Phys. Chem. C 118 23306–12
[144] Jang J W, Maspoch D, Fujigaya T and Mirkin C A 2007 A ‘molecular eraser’ for dip-pen nanolithography Small 3 600–5
[145] Chockalingam M, Darwish N, Le Saux G and Gooding J J 2011 Importance of the indium tin oxide substrate on the quality of self-assembled monolayers formed from organophosphonic acids Langmuir 27 2545–52
[146] Chen R, Kim H, McIntyre P C, Porter D W and Bent S F 2005 Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Appl. Phys. Lett. 86 191910
[147] Chen R, Kim H, McIntyre P C and Bent S F 2004 Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics Appl. Phys. Lett. 84 4017–9
[148] Sampson M D, Emery J D, Pellin M J and Martinson A B F 2017 Inhibiting metal oxide atomic layer deposition: beyond zinc oxide ACS Appl. Mater. Interfaces 9 33429–36
[149] Avila J R, DeMarco E J, Emery J D, Farha O K, Pellin M J, Hupp J T and Martinson A B F 2014 Real-time observation of atomic layer deposition inhibition: metal oxide growth on self-assembled alkanethiols ACS Appl. Mater. Interfaces 6 11891–8
[150] Cao K, Zhu Q Q, Shan B and Chen R 2015 Controlled synthesis of Pd/Pt core shell nanoparticles using area-selective atomic layer deposition Sci. Rep. 5 8470
[151] Lee H B R, Mullings M N, Jiang X R, Clemens B M and Bent S F 2012 Nucleation-controlled growth of nanoparticles by atomic layer deposition Chem. Mater. 24 4051–9
[152] Kalanyan B, Lemaire P C, Atanasov S E, Ritz M J and Parsons G N 2016 Using hydrogen to expand the inherent substrate selectivity window during tungsten atomic layer deposition Chem. Mater. 28 117–26
[153] Stevens E, Tomczak Y, Chan B T, Sanchez E A, Parsons G N and Delabie A 2018 Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon nitride with inhibition on amorphous carbon Chem. Mater. 30 3223–32
[154] Lu J L and Elam J W 2015 Low temperature ABC-type Ru atomic layer deposition through consecutive dissociative chemisorption, combustion, and reduction steps Chem. Mater. 27 4950–6
[155] Yanguas-Gil A, Libera J A and Elam J W 2013 Modulation of the growth per cycle in atomic layer deposition using reversible surface functionalization Chem. Mater. 25 4849–60
[156] George S M and Lee Y 2016 Prospects for thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions ACS Nano 10 4889–94
[157] Song S K, Saare H and Parsons G N 2019 Integrated isothermal atomic layer deposition/atomic layer etching supercycles for area-selective deposition of TiO2 Chem. Mater. 31 4793–804
[158] Vos M F J, Chopra S N, Verheijen M A, Ekerdt J G, Agarwal S, Kessels W M M and Mackus A J M 2019 Area-selective deposition of ruthenium by combining atomic layer deposition and selective etching Chem. Mater. 31 3878–82
[159] Minjauw M M, Rijckaert H, Van Driessche I, Detavernier C and Dendooven J 2019 Nucleation enhancement and area-selective atomic layer deposition of ruthenium using RuO4 and H2 gas Chem. Mater. 31 1491–9
[160] Tao Q, Jursich G and Takoudis C 2010 Selective atomic layer deposition of HfO2 on copper patterned silicon substrates Appl. Phys. Lett. 96 192105
[161] Singh J A, Thissen N F W, Kim W H, Johnson H, Kessels W M M, Bol A A, Bent S F and Mackus A J M 2018 Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation Chem. Mater. 30 663–70
[162] Soethoudt J, Hody H, Spampinato V, Franquet A, Briggs B, Chan B T and Delabie A 2019 Defect mitigation in area-selective atomic layer deposition of ruthenium on titanium nitride/dielectric nanopatterns Adv. Mater. Interfaces 6 1900896
[163] Mackus A J M, Dielissen S A F, Mulders J J L and Kessels W M M 2012 Nanopatterning by direct-write atomic layer deposition Nanoscale 4 4477–80
[164] Mameli A, Karasulu B, Verheijen M A, Barcones B, Macco B, Mackus A J M, Kessels W M M and Roozeboom F 2019 Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition Chem. Mater. 31 1250–7
[165] De Melo C et al 2018 Local structure and point-defect-dependent area-selective atomic layer deposition approach for facile synthesis of p-Cu2O/n-ZnO segmented nanojunctions ACS Appl. Mater. Interfaces 10 37671–8
[166] Kim K et al 2014 Selective metal deposition at graphene line defects by atomic layer deposition Nat. Commun. 5 4781
[167] Kim M, Kim K J, Lee S J, Kim H M, Cho S Y, Kim M-S, Kim S-H and Kim K-B 2017 Highly stable and effective doping of graphene by selective atomic layer deposition of ruthenium ACS Appl. Mater. Interfaces 9 701–9
[168] Kim M, Nabeya S, Nandi D K, Suzuki K, Kim H M, Cho S Y, Kim K B and Kim S-H 2019 Atomic layer deposition of nickel using a heteroleptic Ni precursor with NH3 and selective deposition on defects of graphene ACS Omega 4 11126–34
[169] Kempa T J, Kim S K, Day R W, Park H G, Nocera D G and Lieber C M 2013 Facet-selective growth on nanowires yields multi-component nanostructures and photonic devices J. Am. Chem. Soc. 135 18354–7
[170] Xie J, Yao X H, Madden I P, Jiang D E, Chou L Y, Tsung C-K and Wang D 2014 Selective deposition of Ru nanoparticles on TiSi2 nanonet and its utilization for Li2O2 formation and decomposition J. Am. Chem. Soc. 136 8903–6
[171] Cheng N C, Banis M N, Liu J, Riese A, Li X, Li R, Ye S, Knights S and Sun X 2015 Extremely stable platinum nanoparticles encapsulated in a zirconia nanocage by area-selective atomic layer deposition for the oxygen reduction reaction Adv. Mater. 27 277–81
[172] Weber M J, Verheijen M A, Bol A A and Kessels W M 2015 Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition Nanotechnology 26 094002
[173] Fan F J et al 2017 Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy Nature 544 75–9
[174] Zhang Z W, Ahn J, Kim J, Wu Z Y and Qin D 2018 Facet-selective deposition of Au and Pt on Ag nanocubes for the fabrication of bifunctional Ag@Au–Pt nanocubes and trimetallic nanoboxes Nanoscale 10 8642–9
[175] Song C Y, Sun Y Z, Li J X, Dong C, Zhang J J, Jiang X and Wang L 2019 Silver-mediated temperature-controlled selective deposition of Pt on hexoctahedral Au nanoparticles and the high performance of Au@AgPt NPs in catalysis and SERS Nanoscale 11 18881–93
[176] Cao K, Shi L, Gong M, Cai J M, Liu X, Chu S, Lang Y, Shan B and Chen R 2017 Nanofence stabilized platinum nanoparticles catalyst via facet-selective atomic layer deposition Small 13 1700648
[177] Yan H, Cheng H, Yi H, Lin Y, Yao T, Wang C, Li J, Wei S and Lu J 2015 Single-atom Pd1/graphene catalyst achieved by atomic layer deposition: remarkable performance in selective hydrogenation of 1,3-butadiene J. Am. Chem. Soc. 137 10484–7
[178] Yan H et al 2017 Bottom-up precise synthesis of stable platinum dimers on graphene Nat. Commun. 8 1070
[179] Mol J A, Verduijn J, Levine R D, Remacle F and Rogge S 2011 Integrated logic circuits using single-atom transistors Proc. Natl Acad. Sci. USA 108 13969–72
[180] Fuechsle M, Miwa J A, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg L C L, Klimeck G and Simmons M Y 2012 A single-atom transistor Nat. Nanotechnol. 7 242–6
[181] Flynn C J et al 2016 Site-selective passivation of defects in NiO solar photocathodes by targeted atomic deposition ACS Appl. Mater. Interfaces 8 4754–61
[182] Mameli A, Kuang Y H, Aghaee M, Ande C K, Karasulu B, Creatore M, Mackus A J M, Kessels W M M and Roozeboom F 2017 Area-selective atomic layer deposition of In2O3:H using a μ-plasma printer for local area activation Chem. Mater. 29 921–5
[183] McDonnell S et al 2013 Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination J. Phys. Chem. C 117 20250–9
[184] Lu J L, Low K B, Lei Y, Libera J A, Nicholls A, Stair P C and Elam J W 2014 Toward atomically-precise synthesis of supported bimetallic nanoparticles using atomic layer deposition Nat. Commun. 5 3264
[185] Weber M J, Mackus A J M, Verheijen M A, Van Der Marel C and Kessels W M M 2012 Supported core/shell bimetallic nanoparticles synthesis by atomic layer deposition Chem. Mater. 24 2973–7
[186] Mackus A J M, Thissen N F W, Mulders J J L, Trompenaars P H F, Verheijen M A, Bol A A and Kessels W M M 2013 Direct-write atomic layer deposition of high-quality Pt nanostructures: selective growth conditions and seed layer requirements J. Phys. Chem. C 117 10788–98
[187] Mackus A J M, Thissen N F W, Mulders J J L, Trompenaars P H F, Chen Z H, Kessels W M M and Bol A A 2017 Resist-free fabricated carbon nanotube field-effect transistors with high-quality atomic-layer-deposited platinum contacts Appl. Phys. Lett. 110 013101
[188] Van Dorp W F and Hagen C W 2008 A critical literature review of focused electron beam induced deposition J. Appl. Phys. 104 081301
[189] Carlsson J O 1990 Selective vapor-phase deposition on patterned substrates Crit. Rev. Solid State Mater. Sci. 16 161–212
[190] Schwierz F 2010 Graphene transistors Nat. Nanotechnol. 5 487–96
[191] Liu X F et al 2013 Top-down fabrication of sub-nanometre semiconducting nanoribbons derived from molybdenum disulfide sheets Nat. Commun. 4 1776
[192] Novoselov K S, Mishchenko A, Carvalho A and Castro Neto A H 2016 2D materials and van der Waals heterostructures Science 353 aac9439
[193] Gupta A, Sakthivel T and Seal S 2015 Recent development in 2D materials beyond graphene Prog. Mater. Sci. 73 44–126
[194] Huang Y Z and Liu L 2019 Recent progress in atomic layer deposition of molybdenum disulfide: a mini review Sci. China Mater. 62 913–24
[195] Wang F D, Wang Y Y, Liu Y H, Morrison P J, Loomis R A and Buhro W E 2015 Two-dimensional semiconductor nanocrystals: properties, templated formation, and magic-size nanocluster intermediates Acc. Chem. Res. 48 13–21
[196] Park K S et al 2015 Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO Nanoscale 7 17702–9
[197] Lee H B, Baeck S H, Jaramillo T F and Bent S F 2013 Growth of Pt nanowires by atomic layer deposition on highly ordered pyrolytic graphite Nano Lett. 13 457–63
[198] Xu T, Xie X, Yin K B, Sun J, He L B and Sun L 2014 Controllable atomic-scale sculpting and deposition of carbon nanostructures on graphene Small 10 1724–8
[199] Sun D C, Yang W Y, Zhou L, Sun W Z, Li Q and Shang J K 2016 The selective deposition of silver nanoparticles onto 1 0 1 facets of TiO2 nanocrystals with co-exposed 0 0 1/1 0 1 facets, and their enhanced photocatalytic reduction of aqueous nitrate under simulated solar illumination Appl. Catal. B 182 85–93
[200] Hu X L, Lu S C, Tian J, Wei N, Song X J, Wang X and Cui H 2019 The selective deposition of MoS2 nanosheets onto (101) facets of TiO2 nanosheets with exposed (001) facets and their enhanced photocatalytic H2 production Appl. Catal. B 241 329–37
[201] Ahn J, Wang D, Ding Y, Zhang J W and Qin D 2018 Site-selective carving and Co-deposition: transformation of Ag nanocubes into concave nanocrystals encased by Au–Ag alloy frames ACS Nano 12 298–307
[202] Wang C L, Wang H W, Yao Q, Yan H, Li J J and Lu J 2016 Precisely applying TiO2 overcoat on supported au catalysts using atomic layer deposition for understanding the reaction mechanism and improved activity in CO oxidation J. Phys. Chem. C 120 478–86
[203] Cao K, Cai J M, Liu X and Chen R 2018 Review article: catalysts design and synthesis via selective atomic layer deposition J. Vac. Sci. Technol. A 36 010801
[204] Wen Y W, Cai J M, Zhang J, Yang J Q, Shi L, Cao K, Chen R and Shan B 2019 Edge-selective growth of MCp2 (M = Fe, Co, and Ni) precursors on Pt nanoparticles in atomic layer deposition: a combined theoretical and experimental study Chem. Mater. 31 101–11
[205] Hu Q M, Wang S, Gao Z, Li Y Q, Zhang Q, Xiang Q and Qin Y 2017 The precise decoration of Pt nanoparticles with Fe oxide by atomic layer deposition for the selective hydrogenation of cinnamaldehyde Appl. Catal. B 218 591–9
[206] Cai J M, Zhang J, Cao K, Gong M, Lang Y, Liu X, Chu S, Shan B and Chen R 2018 Selective passivation of Pt nanoparticles with enhanced sintering resistance and activity toward CO oxidation via atomic layer deposition ACS Appl. Nano Mater. 1 522–30
[207] Xiang Q Y, Zhou B Z, Cao K, Wen Y W, Li Y, Wang Z, Jiang C, Shan B and Chen R 2018 Bottom up stabilization of CsPbBr3 quantum dots-silica sphere with selective surface passivation via atomic layer deposition Chem. Mater. 30 8486–94
[208] Odobel F, Pellegrin Y, Gibson E A, Hagfeldt A, Smeigh A L and Hammarstr?m L 2012 Recent advances and future directions to optimize the performances of p-type dye-sensitized solar cells Coord. Chem. Rev. 256 2414–23
[209] Petta J R 2017 Atom-by-atom construction of a quantum device ACS Nano 11 2382–6
[210] Sugimoto Y, Abe M, Hirayama S, Oyabu N, Custance ’O and Morita S 2005 Atom inlays performed at room temperature using atomic force microscopy Nat. Mater. 4 156–9
[211] Eigler D M and Schweizer E K 1990 Positioning single atoms with a scanning tunnelling microscope Nature 344 524–6
[212] Susi T et al 2014 Silicon-carbon bond inversions driven by 60-keV electrons in graphene Phys. Rev. Lett. 113 115501
[213] Mu?oz-Rojas D, Maindron T, Esteve A, Piallat F, Kools J C S and Decams J M 2019 Speeding up the unique assets of atomic layer deposition Mater. Today Chem. 12 96–120
[214] Faber H and Anthopoulos T D 2019 Adding a new layer to ‘more than Moore’ Nat. Electron. 2 497–8
