Effect of Growth Temperature on GaAs Nanowires Formed by Au-Assisted MOCVD

Guo Jingwei; Huang Hui; Ye Xian; Ren Xiaomin; Cai Shiwei; Wang Wei; Wang Qi; Huang Yongqing; Zhang Xia

doi:10.3788/aos201030.s100107

[1] X. Duan, Y. Huang, R. Agarwal et al.. Single-nanowire electrically driven lasers ［J］. Nature, 2003, 421(6920): 241～245

[2] H. Huang, X. Ren, X. Ye et al.. Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers ［J］. Nano Lett., 2010, 10(1): 64～68

[3] J. Wang, M. S. Gudiksen, X. Duan et al.. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires ［J］. Science, 2001, 293(5534): 1455～1457

[4] J. Wensorra, K. M. Indlekofer, M. I. Lepsa et al.. Resonant tunneling in nanocolumns improved by quantum collimation ［J］. Nano Lett., 2005, 5(12): 2470～2475

[5] F. Qian, S. Gradeak, Y. Li et al.. Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes ［J］. Nano Lett., 2005, 5(11): 2287～2291

[6] C. Thelander, T. M rtensson, M.T. Bjork et al.. Single-electron transistors in heterostructure nanowires ［J］. Appl. Phys. Lett., 2003, 83(10): 2052～2054

[7] H. Pettersson, J. Trgrdh, A. I. Persson et al.. Infrared photodetectors in heterostructure nanowires ［J］. Nano Lett., 2006, 6(2): 229～232

[8] M. H. Huang, S. Mao, H. Feick et al.. Room-temperature ultraviolet nanowire nanolasers ［J］. Science, 2001, 292(5523): 1897～1899

[9] Z. H. Wu, X. Y. Mei, D. Kim et al.. Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy ［J］. Appl. Phys. Lett., 2002, 81(27): 5177～5179

[10] X. Ye, H. Huang, X. M. Ren et al.. Growth of pure zinc blende GaAs nanowires: effect of size and density of Au nanoparticles ［J］. Chin. Phys. Lett., 2010, 27(4): 046101

[11] B. J. Ohlsson, M. T. Bjork, A. I. Persson et al.. Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures ［J］. Physica E, 2002, 13(2-4): 1126～1130

[12] R. S. Wagner, W. C. Ellis. Vapor-liquid-solid mechanism of single crystal growth［J］. Appl. Phys. Lett., 1964, 4(5): 89～90

[13] J. C. Harmand, M. Tchernycheva, G. Patriarche et al.. GaAs nanowires formed by Au-assisted molecular beam epitaxy: effect of growth temperature ［J］. J. Cryst. Growth, 2007, 301-302: 853～856

[14] K. Hiruma, M. Yazawa, K. Haraguchi et al.. GaAs free-standing quantum-size wires ［J］. J. Appl. Phys., 1993, 74(5): 3162～3171

[15] M. Borgstrm, K. Deppert, L. Samuelson et al.. Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study ［J］. J. Cryst. Growth, 2004, 260(1-2): 18～22