• Acta Optica Sinica
  • Vol. 44, Issue 5, 0523002 (2024)
Ting Zhang1、2、*, Taiming Guo3, Junya Yan1, and Yanan Pei1
Author Affiliations
  • 1College of Information Engineering, Shanxi Vocational University of Engineering Science and Technology, Jinzhong 030619, Shanxi , China
  • 2College of Instrumentation and Electronics, North University of China, Taiyuan 030051, Shanxi , China
  • 3The University of Queensland, Brisbane 4072, Queensland , Australia
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    DOI: 10.3788/AOS231751 Cite this Article Set citation alerts
    Ting Zhang, Taiming Guo, Junya Yan, Yanan Pei. Design of Tunable Four-Broadband Terahertz Absorber[J]. Acta Optica Sinica, 2024, 44(5): 0523002 Copy Citation Text show less
    Diagram of broadband absorb structure. (a) Schematic of complete array; (b) top view of unit
    Fig. 1. Diagram of broadband absorb structure. (a) Schematic of complete array; (b) top view of unit
    Absorption and real part and imaginary part of the permittivity with different conductivities of VO2. (a) Absorption with different conductivities of VO2; (b) real part of permittivity with different conductivities of VO2; (c) imaginary part of permittivity with different conductivities of VO2
    Fig. 2. Absorption and real part and imaginary part of the permittivity with different conductivities of VO2. (a) Absorption with different conductivities of VO2; (b) real part of permittivity with different conductivities of VO2; (c) imaginary part of permittivity with different conductivities of VO2
    Absorption curves of without VO2, VO2 is cross, VO2 is four-arm, and entire absorber structure
    Fig. 3. Absorption curves of without VO2, VO2 is cross, VO2 is four-arm, and entire absorber structure
    Absorption spectra under different thicknesses and tangent losses of SiO2. (a) Absorption spectra under different thicknesses of SiO2; (b) absorption spectra under different tangent losses of SiO2
    Fig. 4. Absorption spectra under different thicknesses and tangent losses of SiO2. (a) Absorption spectra under different thicknesses of SiO2; (b) absorption spectra under different tangent losses of SiO2
    Relative impedance at different VO2 conductivities. (a) Real part of relative impedance; (b) imaginary part of relative impedance
    Fig. 5. Relative impedance at different VO2 conductivities. (a) Real part of relative impedance; (b) imaginary part of relative impedance
    Surface electric field distribution at four absorption peaks. (a) f1=1.44 THz; (b) f2=3.89 THz; (c) f3=6.63 THz; (d) f4=9.03 THz
    Fig. 6. Surface electric field distribution at four absorption peaks. (a) f1=1.44 THz; (b) f2=3.89 THz; (c) f3=6.63 THz; (d) f4=9.03 THz
    Effect of incidence and polarization angles on absorption. (a) Effect of incidence angle in TE mode; (b) effect of incidence angle in TM mode; (c) effect of polarization angle in TE mode
    Fig. 7. Effect of incidence and polarization angles on absorption. (a) Effect of incidence angle in TE mode; (b) effect of incidence angle in TM mode; (c) effect of polarization angle in TE mode
    Ting Zhang, Taiming Guo, Junya Yan, Yanan Pei. Design of Tunable Four-Broadband Terahertz Absorber[J]. Acta Optica Sinica, 2024, 44(5): 0523002
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