[1] Goldberger J, He R R, Zhang Y F, Lee S, Yan H Q, Choi H J and Yang P D 2003 Single-crystal gallium nitride nanotubes Nature 422 599–602
[2] Wheeler J M, Niederberger C, Tessarek C, Christiansen S and Michler J 2013 Extraction of plasticity parameters of GaN with high temperature, in situ micro-compression Int. J.Plast. 40 140–51
[3] Ganchenkova M G and Nieminen R M 2006 Nitrogen vacancies as major point defects in gallium nitride Phys.Rev. Lett. 96 196402
[4] Li C, Li X L, Wu Y Q, Zhang F H and Huang H 2019 Deformation mechanism and force modelling of the grinding of YAG single crystals Int. J. Mach. Tools Manuf.143 23–37
[5] Yan J W, Lu J B, Huang Y L, Pan J S and Yan Q S 2022 Fenton reaction chemical mechanical polishing liquid composition optimization of polishing GaN wafer Diam.Abrasives Eng. 42 610–6
[6] Li C, Wu Y Q, Li X L, Ma L J, Zhang F H and Huang H 2020 Deformation characteristics and surface generation modelling of crack-free grinding of GGG single crystals J.Mater. Process. Technol. 279 116577
[7] Kubota A and Iwakiri A 2019 Tribochemical polishing of bulk gallium nitride substrate Precis. Eng. 56 69–79
[8] Pan J S, Wu Y S, Zhuo Z J, Wang H, Zheng Q B and Yan Q S 2023 Experimental study of single-crystal GaN wafer electro-Fenton magnetorheological complex friction wear Tribol. Int. 180 108260
[9] Pan J S, Zhuo Z J, Zhang Q X, Zheng Q B and Yan Q S 2022 Friction and wear mechanisms for single crystal GaN based on an electro-Fenton enhanced chemical reaction Wear 498–499 204315
[10] Shi D, Zhou W and Zhao T C 2023 Polishing of diamond, SiC,GaN based on the oxidation modification of hydroxyl radical: status, challenges and strategies Mater. Sci.Semicond. Process. 166 107737
[11] Zhang L F, Wu B, Zhang Y and Deng H 2023 Highly efficient and atomic scale polishing of GaN via plasmabased atom-selective etching Appl. Surf. Sci.620 156786
[12] Zhang L F, Lu D and Deng H 2022 Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN J. Manuf. Process. 73 903–13
[13] Aida H, Takeda H, Kim S W, Aota N, Koyama K, Yamazaki T and Doi T 2014 Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives Appl. Surf. Sci. 292 531–6
[14] Gong H, Pan G S, Zhou Y, Shi X L, Zou C L and Zhang S M 2015 Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing Appl.Surf. Sci. 338 85–91
[15] Yu X, Zhang B G, Wang R, Kao Z, Yang S H and Wei W 2021 Effect of photocatalysts on electrochemical properties and chemical mechanical polishing rate of GaN Mater. Sci.Semicond. Process. 121 105387
[16] Zhang L F and Deng H 2020 Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process Appl. Surf. Sci. 514 145957
[17] Huang H, Li X L, Mu D K and Lawn B R 2021 Science and art of ductile grinding of brittle solids Int. J. Mach. Tools Manuf. 161 103675
[18] Zheng Z D, Huang K, Lin C T, Zhang J G, Wang K, Sun P and Xu J F 2022 An analytical force and energy model for ductile-brittle transition in ultra-precision grinding of brittle materials Int. J. Mech. Sci. 220 107107
[19] Li C, Li X L, Huang S Q, Li L Q and Zhang F H 2021 Ultra-precision grinding of Gd3Ga5O12 crystals with graphene oxide coolant: material deformation mechanism and performance evaluation J. Manuf. Process. 61 417–27
[20] Piao Y C, Li C, Hu Y X, Cui H L, Luo X C, Geng Y Q and Zhang F H 2024 Nanoindentation induced anisotropy of deformation and damage behaviors of MgF2 crystals J.Mater. Res. Technol. 28 4615–25
[21] Zhang Y, Wu T, Li C, Wang Y F, Geng Y Q and Dong G J 2022 Numerical simulations of grinding force and surface morphology during precision grinding of leucite glass ceramics Int. J. Mech. Sci. 231 107562
[22] Huang W H and Yan J W 2023 Effect of tool geometry on ultraprecision machining of soft-brittle materials: a comprehensive review Int. J. Extrem Manuf. 5 012003
[23] Shamray S, Azarhoushang B, Paknejad M and Buechler A 2022 Ductile-brittle transition mechanisms in micro-grinding of silicon nitride Ceram. Int. 48 34987–98
[24] Yang M J, Liu C, Guo B J, Liu K, Tu R, Ohmori H and Zhang S 2023 Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding Mater. Charact. 203 113136
[25] Wang S, Sun G Y, Zhao Q L and Yang X D 2023 Monitoring of ductile–brittle transition mechanisms in sapphire ultra-precision grinding used small grit size grinding wheel through force and acoustic emission signals Measurement210 112557
[26] Li C, Zhang F H, Meng B B, Rao X S and Zhou Y 2017 Research of material removal and deformation mechanism for single crystal GGG (Gd3Ga5O12) based on varied-depth nanoscratch testing Mater Des 125 180–8
[27] Li C, Piao Y C, Zhang F H, Zhang Y, Hu Y X and Wang Y F 2023 Understand anisotropy dependence of damage evolution and material removal during nanoscratch of MgF2 single crystals Int. J. Extrem. Manuf. 5 015101
[28] Zhang Z Q, Shi K N, Huang X C, Shi Y Y, Zhao T, He Z and Song Y H 2022 Development of a probabilistic algorithm of surface residual materials on Si3N4 ceramics under longitudinal torsional ultrasonic grinding Ceram. Int.48 12028–37
[29] Qu S S, Yao P, Gong Y D, Chu D K, Yang Y Y, Li C W,Wang Z L, Zhang X P and Hou Y 2022 Environmentally friendly grinding of C/SiCs using carbon nanofluid minimum quantity lubrication technology J. Clean. Prod.366 132898
[30] Tao H F, Liu Y H, Zhao D W and Lu X C 2023 Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process Tribol. Int. 189 108879
[31] Li M, Guo X G, Dai S Y, Yuan S, Ma J L, Liu F M, Zhang L M, Guo D M and Zhou P 2022 Effect of grinding damage on cutting force and ductile machining during single grain scratching of monocrystalline silicon Mater.Sci. Semicond. Process. 151 107019
[32] Wang Y Q, Li X L, Wu Y Q, Mu D K and Huang H 2021 The removal mechanism and force modelling of gallium oxide single crystal in single grit grinding and nanoscratching Int.J. Mech. Sci. 204 106562
[33] Li C, Piao Y, Meng B B, Zhang Y, Li L Q and Zhang F H 2022 Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane Appl. Surf. Sci.578 152028
[34] Li C, Piao Y, Meng B B, Hu Y X, Li L Q and Zhang F H 2022 Phase transition and plastic deformation mechanisms induced by self-rotating grinding of GaN single crystals Int.J. Mach. Tools Manuf. 172 103827
[35] Tan S P, Wang Y P, Huang H, Wu Y Q and Huang H 2022 Deformation and removal mechanism of single crystal gallium nitride in nanoscratching Ceram. Int. 48 23793–9
[36] Guo M X, Tao J B, Wu C J, Luo C and Lin Z J 2023 High-speed grinding fracture mechanism of Cf/SiC composite considering interfacial strength and anisotropy Ceram. Int. 49 2600–12
[37] Li C, Zhang F H, Meng B B, Liu L F and Rao X S 2017 Material removal mechanism and grinding force modelling of ultrasonic vibration assisted grinding for SiC ceramics Ceram. Int. 43 2981–93
[38] Lou Z Z, Yan Y D, Wang J Q, Zhang A X, Cui H L, Li C and Geng Y Q 2024 Exploring the structural color of micro-nano composite gratings with FDTD simulation and experimental validation Opt. Express 32 2432–51
[39] Li C, Hu Y X, Huang S Q, Meng B B, Piao Y and Zhang F H 2022 Theoretical model of warping deformation during self-rotating grinding of YAG wafers Ceram. Int.48 4637–48
[40] Huang S Q, Gao S, Huang C Z and Huang H 2022 Nanoscale removal mechanisms in abrasive machining of brittle solids Diam. Abrasives Eng. 42 257–67
[41] Li C, Zhang F H, Wang X and Rao X S 2018 Repeated nanoscratch and double nanoscratch tests of Lu2O3 transparent ceramics: material removal and deformation mechanism, and theoretical model of penetration depth J. Eur. Ceram. Soc. 38 705–18
[42] Meng B B, Yuan D D and Xu S L 2019 Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale Ceram. Int.45 2483–91
[43] Guo X G, Li Q, Liu T, Zhai C H, Kang R K and Jin Z J 2016 Molecular dynamics study on the thickness of damage layer in multiple grinding of monocrystalline silicon Mater. Sci.Semicond. Process. 51 15–19
[44] Zhou P, Zhu N N, Xu C Y, Niu F L, Li J and Zhu Y W 2021 Mechanical removal of SiC by multi-abrasive particles in fixed abrasive polishing using molecular dynamics simulation Comput. Mater. Sci 191 110311
[45] Zhao P Y, Zhao B, Pan J S and Wu J W 2022 Superimpose mechanism of surface generation process in grinding of monocrystalline silicon using molecular dynamics simulation Mater. Sci. Semicond. Process. 147 106684
[46] Hu Z W, Chen Y, Lai Z Y, Yu Y Q, Xu X P, Peng Q and Zhang L 2022 Coupling of double grains enforces the grinding process in vibration-assisted scratch: insights from molecular dynamics J. Mater. Process. Technol. 304 117551
[47] Karkalos N E and Markopoulos A P 2020 Molecular dynamics study of the effect of abrasive grains orientation and spacing during nanogrinding Micromachines 11 712
[48] Dai H F, Yue H X, Hu Y and Li P 2021 The removal mechanism of monocrystalline Si in the process of double diamond abrasive polishing by molecular dynamics simulation Tribol. Lett. 69 66
[49] Li C, Hu Y X, Zhang F H, Geng Y Q and Meng B B 2023 Molecular dynamics simulation of laser assisted grinding of GaN crystals Int. J. Mech. Sci. 239 107856
[50] Dai H F, Hu Y, Wu W L, Yue H X, Meng X S, Li P and Duan H G 2021 Molecular dynamics simulation of ultra-precision machining 3C-SiC assisted by ion implantation J. Manuf. Process. 69 398–411
[51] Wang J Q, Yan Y D, Li C and Geng Y Q 2023 Material removal mechanism and subsurface characteristics of silicon 3D nanomilling Int. J. Mech. Sci. 242 108020
[52] Gao S, Wang H X, Huang H and Kang R K 2023 Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal Int. J. Mech. Sci. 247 108147
[53] Chen M H and Dai H F 2022 Molecular dynamics study on grinding mechanism of polycrystalline silicon carbide Diam. Relat. Mater. 130 109541
[54] Huang Y H, Zhou Y Q, Li J M and Zhu F L 2023 Understanding of the effect of wear particles removal from the surface on grinding silicon carbide by molecular dynamics simulations Diam. Relat. Mater. 137 110150
[55] Wu Y L, Tan J, Li X M, Qiu Z J and Zhang R Z 2023 Molecular dynamics study on friction of high-entropy alloy FeNiCrCoCu Mater. Today Commun. 37 107107
[56] Huang Y H, Wang M C, Xu Y X and Zhu F L 2020 Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics J. Manuf. Process. 57 153–62
[57] Zhang C Y, Dong Z G, Yuan S, Guo X G, Kang R K and Guo D M 2021 Study on subsurface damage mechanism of gallium nitride in nano-grinding Mater. Sci. Semicond. Process. 128 105760
[58] Li L and Ge P Q 2021 Analysis of SPH and FEM coupling simulation of abrasive grain scratching single crystal SiC Surf. Technol. 50 44–53
[59] Jiang Q Q, Zhang L and Yang C F 2021 An analytical model for estimation of the stress field and cracks caused by scratching anisotropic single crystal gallium nitride Mater. Sci. Semicond. Process. 122 105446
[60] Luo X C, Goel S and Reuben R L 2012 A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide J. Eur. Ceram. Soc.32 3423–34
[61] Goel S, Luo X C and Reuben R L 2012 Shear instability of nanocrystalline silicon carbide during nanometric cutting Appl. Phys. Lett. 100 231902
[62] Nord J, Albe K, Erhart P and Nordlund K 2003 Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride J. Phys.: Condens. Matter 15 5649–62
[63] Los J H and Fasolino A 2003 Intrinsic long-range bond-order potential for carbon: performance in Monte Carlo simulations of graphitization Phys. Rev. B 68 024107
[64] Hou X, Li J Y, Li Y Z and Tian Y 2022 Intermolecular and surface forces in atomic-scale manufacturing Int. J. Extrem.Manuf. 4 022002
[65] Wu L, Yu B, Zhang P, Feng C, Chen P, Deng L, Gao J, Chen S,Jiang S and Qian L 2020 Rapid identification of ultrathin amorphous damage on monocrystalline silicon surface Phys. Chem. Chem. Phys. 22 12987–95
[66] Zhang Y F, Zhu S L, Zhao Y Y and Yin Y H 2022 A material point method based investigation on crack classification and transformation induced by grit geometry during scratching silicon carbide Int. J. Mach. Tools Manuf.177 103884
[67] Jiang Q Q, Zhang L and Yang C F 2022 Analysis of crack initiation load and stress field in double scratching of single crystal gallium nitride Eng. Fract. Mech.274 108732
[68] Zhao L, Zhang J G, Zhang J J, Hartmaier A and Sun T 2022 Formation of high density stacking faults in polycrystalline 3C-SiC by vibration-assisted diamond cutting J. Eur.Ceram. Soc. 42 5448–57
[69] Zhang Y C, Song R B, Wang Y J, Cai C H, Wang H B and Wang K K 2023 The excellent strength and ductility matching of directly warm-rolled V-alloyed medium manganese steel by stacking fault networks Mater. Des.227 111719
[70] Meng B B and Li C 2023 Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process J. Adv. Res. (https://doi.org/10.1016/j.jare.2023.04.004)
[71] Zhang Y, Wang Q, Li C, Piao Y, Hou N and Hu K N 2022 Characterization of surface and subsurface defects induced by abrasive machining of optical crystals using grazing incidence x-ray diffraction and molecular dynamics J. Adv.Res. 36 51–61
[72] Qiang B Y, Shi K N, Liu N, Ren J X and Shi Y Y 2023 Integrating physics-informed recurrent Gaussian process regression into instance transfer for predicting tool wear in milling process J. Manuf. Syst. 68 42–55
[73] Wang S, Dong H, Gu Y, Wang M and Wang J W 2022 Research on grinding quality and removal mechanism of polycrystalline diamond tools Diam. Abrasives Eng. 42 467–72
[74] Kataoka R and Shamoto E 2019 Influence of vibration in cutting on tool flank wear: fundamental study by conducting a cutting experiment with forced vibration in the depth-of-cut direction Precis. Eng. 55 322–9
[75] Pálmai Z 2013 Proposal for a new theoretical model of the cutting tool’s flank wear Wear 303 437–45
