Researching | Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Journals >Journal of Semiconductors >Volume 45 >Issue 9 >Page 092503 > Article

Journal of Semiconductors
Vol. 45, Issue 9, 092503 (2024)

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Shijie Pan¹, Shiwei Feng^1,*, Xuan Li², Zixuan Feng¹..., Xiaozhuang Lu¹, Kun Bai¹ and Yamin Zhang¹|Show fewer author(s)

Author Affiliations

¹College of Microelectronics, Beijing University of Technology, Beijing 100124, China

²Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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DOI: 10.1088/1674-4926/24020020 Cite this Article

Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503 Copy Citation Text

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References

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[16] H Sasaki, T Hisaka, K Kadoiwa et al. Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs. Microelectron Reliab, 81, 312(2018).

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[20] G A Umana Membreno, J M Dell, G Parish et al. Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs. phys stat sol (c), 2, 2581(2005).

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Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503

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