Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)

Liyuan Song; Libin Tang; Qun Hao

doi:10.3788/IRLA20211019

Journals >Infrared and Laser Engineering >Volume 50 >Issue 1 >Page 20211019 > Article

Infrared and Laser Engineering
Vol. 50, Issue 1, 20211019 (2021)

Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)

Liyuan Song^1、2、3, Libin Tang^{1、2、3、*}, and Qun Hao^1、*

Author Affiliations

¹The Laboratory of Photonics Information Technology, Ministry of Industry and Information Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

²Kunming Institute of Physics, Kunming 650223, China

³Yunnan Key Laboratory of Advanced Photoelectronic Materials & Devices, Kunming 650223, China

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DOI: 10.3788/IRLA20211019 Cite this Article

Liyuan Song, Libin Tang, Qun Hao. Preparation, structure and properties of tin telluride and its research progress in infrared photodetection (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211019 Copy Citation Text

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Fig. 1. [in Chinese]

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Fig. 2. [in Chinese]

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Fig. 3. [in Chinese]

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Fig. 4. [in Chinese]

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Fig. 5. [in Chinese]

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Fig. 6. [in Chinese]

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Preparation methods	Morphological structure	Features	Year	Ref.
MBE	SnTe-based films and superlattices	The structure parameters of the PbTe/SnTe superlattice were determined by the selected buffer layer material	1997	[23]
MBE	Si (111) substrate/ SnTe thin film	The electronic structure of the film was adjustable by changing thickness and lead doping level	2014	[24]
MBE	BaF₂(001) substrate/ SnTe film	By increasing the growth temperature, the film has higher mobility and lower carrier concentration	2014	[25]
MBE	Sapphire substrate/Bi₂Te₃ buffer layer/SnTe film	Dirac electrons on the SnTe (111) surface was gained by transmission measurements on a high quality film grown on the Bi₂Te₃ buffer layer	2014	[26]
MBE	BaF₂substrate/SnTe film	By optimizing the growth conditions and film thickness, the carrier concentration is reduced, which conduced to study the surface magnetic transport characteristics	2015	[27]
MBE	GaAs (111) A substrate/CdTe/ SnTe film	Single-phase very low hole concentration of SnTe (111) can be obtained by optimizing the growth temperature of SnTe and CdTe layers and the growth rate of SnTe	2016	[28]
MBE	Substrate/Bi₂Te₃ buffer layer/SnTe film	An efficient photoconductive photodetector was prepared based on 10 nm TCI SnTe	2017	[29]
CVD	SnTe nanowire	The exposed surface of SnTe micro-nano structure can be adjusted by experimental parameters such as temperature	2014	[30]
CVD	SnTe nanoribbon	The controlled growth of crystal surface of SnTe nanocrystals {100} can be realized by Bi doping	2016	[31]
CVD	SnTe thin film/n-Si Nps heterojunction	A photovoltaic photodetector was prepared based on SnTe/Si Nps heterojunction	2017	[32]
PVD	SnTe thin film/n-Si heterojunction	A photovoltaic photodetector was prepared based on SnTe/Si heterojunction	2017	[33]
PVD	SnTe flake	A field effect transistor photodetector was prepared based on SnTe single crystal	2018	[34]
PVD	SnTe thin film/n-Bi₂Se₃ heterojunction	A photovoltaic photodetector was prepared based on SnTe/Bi₂Se₃ heterojunction	2020	[19]
Hot wall epitaxy	SnTe-based films and superlattices	The prepared EuTe/SnTe SL showed a high mobility of 2720 cm²/(V·S) at room temperature. The Seebeck coefficients of SnTe/PbSe and SnTe/PbS SLs can be close to those of PbSe and PbS	2009	[35]
Solution-phase synthesis	SnTe quantum dot	By changing the growth temperature, concentration of reaction mixture, etc., the average diameter of SnTe NCs was adjustable within 4.5-15 nm, and the band gap correspondingly is 0.8-0.38 eV. It can be used in near-infrared photoelectric devices	2007	[36]
Solution-based synthesis	SnTe nanostructure	The shape/size controlled preparation of SnTe nanotubes, nanorods and nanowires promotes the application of colloidal infrared active nanomaterials in practical technologies	2015	[37]
Vapor-liquid− solid growth	SnTe nanoplates	SnTe nanoplate were prepared with large {100} or {111} surface areas, allowing selective study of the surface states on these surfaces. The phase transition from rock salt structure to rhombic structure was observed at low temperature	2014	[38]
Solid solution alloying	Sn _1.03−x Mg _x Te ingot	Adjusting the SnTe electron band structure by Mg doping, the Seebeck coefficient was improved and the thermoelectric property was optimized	2014	[39]
Microwave solvothermal method	Se/Cd co-doped SnTe octahedral particles	By using the strategy of co-doping selenium and cadmium, the energy band structure of SnTe was optimized to improve the power factor and thermoelectric optimization value	2017	[40]
Alloying	Ge doped SnTe alloy	The local structure distortion and related ferroelectric instability of SnTe were adjusted by Ge doping, and the ultra-low lattice thermal conductivity was aquired to optimize the thermoelectric performance of SnTe	2019	[41]

Table 1. [in Chinese]

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Phases	Crystal structures	Space groups	Lattice parameters
α-SnTe	Rhombohedral structure	R3m	α = 89.895°, a = 6.325 Å （1Å = 0.1 nm）,
β-SnTe	Rock-salt Cubic structure	Fm3m	α = 90°, a = 6.3268 Å
γ-SnTe	Orthorhombic structure	Pnma	α = 90°, a= 11.95 Å, b = 4.37 Å, c= 4.48 Å

Table 2. [in Chinese]

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