• Journal of Advanced Dielectrics
  • Vol. 11, Issue 2, 2150009 (2021)
R. Sun1, W. Xu2, and R. B. van Dover1、*
Author Affiliations
  • 1Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
  • 2Department of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
  • show less
    DOI: 10.1142/S2010135X21500090 Cite this Article
    R. Sun, W. Xu, R. B. van Dover. Dielectric properties of amorphous Bi–Ti–O thin films[J]. Journal of Advanced Dielectrics, 2021, 11(2): 2150009 Copy Citation Text show less
    References

    [1] M. Nayak, S. Ezhilvalavan. Handbook of Thin Films, ed. Nalwa H. S., 100-103(2002).

    [2] R. M. Wallace. Handbook of Advanced Electronic and Photonic Devices and Materials, ed. Nalwa H. S., 615-641(2000).

    [3] P. J. Harrop, D. S. Campbell. Selection of thin film capacitor dielectrics. Thin Solid Films, 2, 273(1968).

    [4] U. Akgul. Structural and dielectric properties of TiO2 thin films grown at different sputtering powers. Eur. Phys. J. Plus, 134, 3(2019).

    [5] M. D. Stamate. Dielectric properties of TiO2 thin films deposited by a DC magnetron sputtering system. Thin Solid Films, 372, 246(2000).

    [6] V.-S. Dang, H. Parala, J. H. Kim, K. Xu, N. B. Srinivasan, E. Edengeiser, M. Havenith, A. D. Wieck, T. de los Arcos, R. A. Fischer, A. Devi. Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition. Phys. Status Solidi A, 214, 416(2014).

    [7] J. E. Alfonso, J. J. Olaya, C. M. Bedoya-Hincapié, J. Toudert, R. Serna. Annealing effect on the structural and optical properties of sputter-grown bismuth titanium oxide thin films. Materials, 7, 3427(2014).

    [8] E. I. Speranskaya, I. S. Rez, L. V. Kozlova, V. M. Skorikov, V. I. Slavov. The system of bismuth oxide-titanium dioxide. Inorg. Mater., 1, 213(1965).

    [9] C. Shen, H. Zhang, Y. Zhang, H. Xu, H. Yu, J. Wang, S. Zhang. Orientation and temperature dependence of piezoelectric properties for sillenite-type Bi12TiO20 and Bi12SiO20 single crystals. Crystals, 4, 141(2014).

    [10] J. Cagnon, D. S. Boesch, N. H. Finstrom, S. Z. Nergiz, S. P. Keane, S. Stemmer. Microstructure and dielectric properties of pyrochlore Bi2Ti2O7 thin films. J. Appl. Phys., 102, 044102(2007).

    [11] R. B. van Dover, L. F. Schneemeyer, R. M. Fleming, H. A. Huggins. A high-throughput search for electronic materials — Thin-film dielectrics. Biotechnol. Bioeng., 61, 217(2000).

    [12] T. A. Naoi, H. Paik, M. L. Green, R. B. van Dover. Dielectric properties of amorphous Zr-Al-O and Zr-Si-O thin films. J. Adv. Dielectr., 5, 1550010(2015).

    [13] M. Lanza, M. K. Zhang, M. Porti, M. Nafra, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker. Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures. Appl. Phys. Lett., 100, 123508(2012).

    [14] H. Duan, C. C. Yuan, N. Becerra, L. J. Small, A. Chang, J. M. Gregoire, R. B. van Dover. High-throughput measurement of ionic conductivity in composition-spread thin films. ACS Comb. Sci., 15, 273(2013).

    [15] S. C. Barron, M. M. Noginov, D. Werder, L. F. Schneemeyer, R. B. van Dover. Dielectric response of tantalum oxide subject to induced ion bombardment during oblique sputter deposition. J. Appl. Phys., 106, 104110(2009).

    [16] T. A. Naoi, R. B. van Dover. Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films. J. Appl. Phys., 123, 244103(2018).

    R. Sun, W. Xu, R. B. van Dover. Dielectric properties of amorphous Bi–Ti–O thin films[J]. Journal of Advanced Dielectrics, 2021, 11(2): 2150009
    Download Citation