R. Sun, W. Xu, R. B. van Dover. Dielectric properties of amorphous Bi–Ti–O thin films[J]. Journal of Advanced Dielectrics, 2021, 11(2): 2150009
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We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < < 0.7, amorphous exhibits excellent dielectric properties, with a high dielectric constant, 53, and a dissipation factor as low as tan = 0.007. The corresponding maximum breakdown field reaches 1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 C/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < < 0.7, amorphous exhibits excellent dielectric properties, with a high dielectric constant, 53, and a dissipation factor as low as tan = 0.007. The corresponding maximum breakdown field reaches 1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 C/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.