Jinxiao Li, Zhen Liu, Sican Ye, Ao Lu, Wenyuan Hua, Ning Dang, Dawei Yan. Forward Current Transport in P-I-N Type GaN Ultraviolet Detector[J]. Laser & Optoelectronics Progress, 2023, 60(23): 2304002
- Laser & Optoelectronics Progress
- Vol. 60, Issue 23, 2304002 (2023)
Fig. 1. P-I-N type GaN ultraviolet diodes. (a) Schematic cross-sectional structure; (b) cathodoluminescence mapping image of GaN wafer used; (c) top-viewed image of fabricated diodes
Fig. 2. Forward temperature-dependent I-V curves of P-I-N type GaN ultraviolet (UV) diodes
Fig. 3. Forward I-V characteristic and fitting curves at 300 K
Fig. 4. Dependence of n and Eg on temperature at forward high voltage
Fig. 5. (a) Forward electroluminesence (EL) curves; (b) schematic bandgap diagram of conductive dislocations of P-I-N type GaN UV diodes
Fig. 6. (a) Schematic diagram of defect-assisted tunneling process; (b) dependence of E0 and n on temperature of P-I-N type GaN UV diodes
Fig. 7. Dependence of β1 and β2 on temperature for VF<1.35 V
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