• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 2, 181 (2004)
[in Chinese]*
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  • [in Chinese]
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    [in Chinese]. Atomic scale controlled epitaxial growth and charaterization investigation of perovskite oxide films and heterojunctions[J]. Chinese Journal of Quantum Electronics, 2004, 21(2): 181 Copy Citation Text show less

    Abstract

    Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. Measurements of atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) reveal that the surfaces and interfaces of the thin films and heterojunctions are atom-level-smooth. The optically transparent oxide thin films with transmittances higher than 85% in the visible region have been fabricated. The electrical and optical properties of BaTiO3-x thin films and BaTiO3/SrTiO3 (BTO/STO) superlattices were examined. The BaTiO3-x thin films have the properties of insulator, semiconductor or conductor with different oxygen content. The coefficient of the second harmonic generation of BTO/STO is 23 times larger than that of bulk BaTiO3 crystal. We observed the current and voltage modulations of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n junctions by applied magnetic fields and found that the p-n junctions exhibited the positive colossal magnetoresistance (CMR) behavior for the first time.The CMR ratio (△R/R0,△R=RH-R0) are 46.7% and 83.4% in 5 Oe,and 1000 Oe at 255 K for LSMO/SNTO p-n junction;and the positive CMR ratio as large as 515% at 100 K at 3T in LSMO/SNTO multilayer p-n heterostructure are found.
    [in Chinese]. Atomic scale controlled epitaxial growth and charaterization investigation of perovskite oxide films and heterojunctions[J]. Chinese Journal of Quantum Electronics, 2004, 21(2): 181
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