Experimental research on temperature variation law of commercial Flash devices for space application

Wang Youzhen; Fang Liang; Liu Yanmin; Qiao Kuangyi; Guo Peng

[1] Bez R, Camerlenghi E, Modelli A, et al. Introduction to flash memory [J]. IEEE, 2003, 91(4): 489-502.

[2] Pavan P, Bez R, Olivo P, et al. Flash memory cells-an overview [J]. IEEE, 1997, 85(8): 1248-1271.

[3] Bez R. Chalcogenide PCM: A memory technology for next decade [C]//Electron Devices Meeting, 2009: 1-4.

[4] Sakui K, Deog Suh K. NAND flash memory technology [C]//Nonvolatile Memory Technolo gies with Emphasis on Flash, 2008: 445-590.

[5] Gerardin S, Paccagnella A. Present and future non-volatile memories for space [J]. IEEE Transactions on Nuclear Science, 2010, 57(6): 3016-3019.

[6] Lovellette M, Campbell A, Hughes H, et al. Nanotube memories for space applications[C]//Proc IEEE Aerospace Conf, 2004, 4: 2300-2305.

[7] Forni G, Ong C, Rice C, et al. Flash memory applications [C]//Nonvolatile Memory Technologies with Emphasis on Flash, 2008: 19-62.

[8] Cellere G, Pellati P, Chimenton A, et al. Radiation effects on floating-gate memory cells [J]. IEEE Transactions on Nuclear Science, 2001, 48(6): 2222-2228.

[9] Cellere G, Larcher L, Paccagnella A, et al. Radiation induced leakage current in floating gate memory cells[J]. IEEE Transactions on Nuclear Science, 2005, 52(6): 2144-2152.

[10] Houdt J V, Degraeve R, Groeseneken G, et al. Physics of flash memories in Nonvolatile memory technologies with emphasis on Flash [M]. NJ: Wiley Online Library, 2008: 129-177.

[11] Lee Jae-Duk, Hur Sung-Hoi, Choi Jung-Dal. Effect of floating-gate interference on NAND flash memory cell operation [J]. IEEE Electron Device Letters, 2002, 23(5): 264-266.