FERROELECTRIC POLARONIN LAYERED PEROVSKITE FERROELECTRIC THIN FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 1 >Page 1 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 1, 1 (2005)

FERROELECTRIC POLARONIN LAYERED PEROVSKITE FERROELECTRIC THIN FILMS

[in Chinese]^{1、2、3、4、5、6、7、8}, [in Chinese]^{5、6、7、8}, [in Chinese]^{5、6、7、8}, and [in Chinese]^{5、6、7、8}

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

⁴200062

⁵[in Chinese]

⁶[in Chinese]

⁷[in Chinese]

⁸200083

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. FERROELECTRIC POLARONIN LAYERED PEROVSKITE FERROELECTRIC THIN FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 1 Copy Citation Text

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References

[1] Stolichnov I Tagantsev A.Space-charge influenced-injection model for conduction in Pb(ZrxTi1- x)O3 thin films.[J]J. Appl. Phys. ; 1998; 84: 3216-3225.

[2] Blom P W M; Wolf R M; Cillessen J F M; et al. Ferroelectric schottky diode[J].Phys. Rev. Lett.; 1994; 73:2107-2111.

[3] Araujo C A P; Cuchiare J D; McMillan L D; et al. Fatiguefree ferroelectriccapacitors with platinum electrodes [J].Nature; 1995; 374: 627-631.

[4] Yang P; Zhou N; Zheng L; et al. Growth and ferroelectric properties of strontiumbismuth tantalite thin films using pulsed deposition combined with an annealing process [J].J. Phys. D: Appl. Phys. ; 1997; 30: 527-532.

[6] Mey W Hermann M A. Drift Mobilities of Holes and Electrons in Naphthalene Single Crystals [J]. Phys. Rev. B;1973; 7: 1652-1657.

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. FERROELECTRIC POLARONIN LAYERED PEROVSKITE FERROELECTRIC THIN FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 1

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