High quality SrBi₂Ta₂O₉(SBT) ferroelectric thin films were fabricated on platinized silicon substrate by PLD.Electronic transport properties of SrBi₂Ta₂O9 ferroelectric thin films in temperaturerange of 10 to 300K were studied. The conduction mechanisms in the thin films wereanalyzed. The results indicate the existence of two conduction mechanisms in SBTferroelectric thin films. Due to the SBT layered structure, the carrier transport can bedivided into two parts: internal transport, which is between the (Bi₂O₂)2+ layers, andexternal transport, which is across the (Bi2O2)2 + layers. Especially, behavior ofelectric transport of the polaron as an internal transport carrier is first observed inthe SrBi₂Ta₂O9 ferroelectric thin films. Activation energy of the internal transportcarriers is Ea ～ 0.0556 eV. The results can be helpful in understanding the low DC leakage in SBT films atroom temperature.