• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 5, 550 (2017)
ZHOU Ying*, YU Pan-Pan, and GAO Jian-Jun
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.05.07 Cite this Article
    ZHOU Ying, YU Pan-Pan, GAO Jian-Jun. Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device[J]. Journal of Infrared and Millimeter Waves, 2017, 36(5): 550 Copy Citation Text show less
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    [2] GAO Jian-Jun, Werthof A. Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit [J]. IET Microwave, Antennas and Propagation. 2009, 3(4):564-571.

    [3] Xu Jian-Fei, Yan Nan, Zeng X, Gao Jian-Jun. A 3.4 dB NF k-band LNA with a tapped capacitor matching network in 65 nm CMOS technology [J]. International Journal of RF and Microwave Computer-Aided Engineering. 2015, 25(2):146-153.

    [4] Eo Y, Eisenstadt W R. High-speed VLSI interconnect modeling based on S-parameter measurements [J]. IEEE Transaction On Components, Hybrids, and Manufacturing Technology. 1993, 16(5):555-562.

    [5] Kwon I, Je M, Lee K, et al. A simple and analytical parameter-extraction method of a microwave MOSFET [J]. IEEE Transactions on Microwave Theory and Techniques. 2002, 50(6):1503-1509.

    [6] Mei S, Ismail Y I. Modeling skin and proximity effects with reduced realizable RL circuits [J]. IEEE Transaction on Very Large Scale Integration System. 2004, 12(4):437-447.

    [7] Gao Jian-Jun, Werthof A. Scalable small-signal and noise modeling for deep-submicrometer MOSFETs [J]. IEEE Transactions on Microwave Theory and Techniques. 2009, 57(4):737-744.

    ZHOU Ying, YU Pan-Pan, GAO Jian-Jun. Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device[J]. Journal of Infrared and Millimeter Waves, 2017, 36(5): 550
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