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Journals >Journal of Infrared and Millimeter Waves >Volume 40 >Issue 2 >Page 184 > Article

Journal of Infrared and Millimeter Waves
Vol. 40, Issue 2, 184 (2021)

Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging

Da-Sheng CUI^*, Jia-Ming YANG, Hong-Xuan YAO, and Xin LYU

Author Affiliations

Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, School of Information and Electrics, Beijing Institute of Technology, Beijing 100081, China

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DOI: 10.11972/j.issn.1001-9014.2021.02.008 Cite this Article

Da-Sheng CUI, Jia-Ming YANG, Hong-Xuan YAO, Xin LYU. Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 184 Copy Citation Text

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References

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[4] S P Han, J W Park, H Ko et al. Terahertz imaging using InGaAs Schottky barrier diode array detectors(2013).

[5] M W Ryu, J S Lee, K S Kim et al. High-performance plasmonic THz detector based on asymmetric FET with vertically integrated antenna in CMOS technology. IEEE Transactions on Electron Devices, 63, 1742-1748(2016).

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[9] E Seok, C Cao, S Sankaran et al. A millimeter-wave Schottky Diode detector in 130-nm CMOS technology(2006).

[10] R Han, Y Zhang, D Coquillat et al. A 280-GHz Schottky diode detector in 130-nm digital CMOS, 2602-2612(2011).

[11] R Han, Y Zhang, Y Kim et al. Active terahertz imaging using Schottky diodes in CMOS: array and 860-GHz pixel. IEEE Journal of Solid-State Circuits, 48, 2296-2308(2013).

[12] S P Han, H Ko, N Kim et al. Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector. Optics Express, 22, 28977-83(2014).

[13] W L Chang, C Meng, G W Huang. SBD layout optimization with effect of N-well to p-substrate pn junctions in 0.18 μm CMOS process(2016).

[14] H Rein, M Schroter. Base spreading resistance of square-emitter transistors and its dependence on current crowding. IEEE Transactions on Electron Devices, 36, 770-773(1989).

[15] L Nan, K Mouthaan, Y Z Xiong et al. Experimental characterization of the effect of metal dummy fills on spiral inductors(2007).

[16] S Sankaran, K O Kenneth. Schottky barrier diodes for millimeter wave detection in a foundry CMOS process. IEEE Electron Device Letters, 26, 492-494(2005).

[17] S Sankaran, K. K O. Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 μm CMOS. Electronics Letters, 41, 506-508(2005).

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Da-Sheng CUI, Jia-Ming YANG, Hong-Xuan YAO, Xin LYU. Three-dimensional structure analysis of Schottky barrier diode in CMOS technology for terahertz imaging[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 184

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