In order to obtain high-quality films and reduce experimental costs, β-Ga₂O₃ films were synthesized on mica substrates by chemical vapor deposition using GaTe powder as the Ga source. High crystalline quality β-Ga₂O₃ thin films were obtained by changing the growth temperature, buffer gas, and growth time, which were confirmed by X-ray diffraction (XRD) and Raman spectroscopy. XRD results showed that the optimal growth temperature of the film was 750 ℃. A comparison of β-Ga₂O₃ films synthesized under different buffer gases revealed Ar to be the best environment for growing film materials. The growth time of the thin films was changed under an Ar atmosphere to achieve β-Ga₂O₃ thin films with high crystalline quality. XRD results showed that the thin film with a growth time of 20 min had high crystalline quality. Finally, it was transferred to a Si/SiO₂ substrate with a 300 nm thick oxide layer and tested by atomic force microscopy to obtain a 16 nm thick two-dimensional Ga₂O₃ film.