High-performance infrared emitters hold substantial importance in modern engineering and physics. Here, we introduce graphene/PZT (lead zirconate titanate) heterostructure as a new platform for the development of infrared source structure based on an electron–phonon coupling and emitting mechanism. A series of electrical characterizations including carrier mobility [$\mathrm{11,361.55}{\mathrm{cm}}^2/(\mathrm{V}·\mathrm{s})$], pulse current (30 ms response time), and cycling stability (2000 cycles) modulated by polarized film was provided. Its maximum working temperature reaches $\sim 1041\mathrm{K}$ ($\sim 768°\mathrm{C}$), and it was broken at 1173 K ($\sim 900°\mathrm{C}$) within $\sim 1.2\mathrm{s}$ rise time and fall time. Based on Wien’s displacement law, the high temperature will lead to near–mid–far thermal infrared when the heterostructure is applied to external voltages, and obvious bright white light could be observed by the naked eye. The changing process has also been recorded by mobile phone. In subsequent infrared emitting applications, 11 V bias voltage was applied on the PZT/graphene structure to produce the temperature change of $\sim 299$ to 445 K within $\sim 0.96\mathrm{s}$ rise time and $\sim 0.98\mathrm{s}$ fall time. To demonstrate its optical information transmission ability, we exhibited “N, U, C” letters by the time-frequency method at $3\mathrm{mm}\times 3\mathrm{mm}@20\mathrm{m}$ condition. Combining with spatial Morse code infrared units, alphabetic information could also be transmitted by infrared array images. Compared with the traditional infrared emitter, the electron–phonon enhancing mechanism and high-performance emission properties of the heterostructure demonstrated a novel and reliable platform for further infrared optical applications.