Band gap of the Inx Ga1-x N was changed by doping with different concentrations of In content for changing the quantum well barrier height. The relationship between the type of barrier height and the power spectral density, internal quantum efficiency, light emitting power and recombination rate of the InGaN/GaN quantum well light-emitting diode was researched. The analysis results showed as follows: 1) In content of the light-emitting diode and optical properties is not a linear relationship. 2) When the current density is low, the smaller the In content, the greater the peak of the spectral density and power of the light emitting. 3) However, when the current density is larger, the greater the In content, the greater the peak of the spectral density and power of the light emitting. 4) The blue-shift associates with the size of the current density, when current density is large, blue-shift is big, the smaller the contrary. Therefore, the content of In should be selected according to the type of current density so as to improve the luminous efficiency.