Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

Zhiwen Li; Jiangliu Luo; Shengqun Hu; Qiang Liu; Wenjie Yu; Youming Lu; Xinke Liu

doi:10.1364/PRJ.385885

Journals >Photonics Research >Volume 8 >Issue 6 >Page 799 > Article

Photonics Research
Vol. 8, Issue 6, 799 (2020)

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition

Zhiwen Li^1、†, Jiangliu Luo¹, Shengqun Hu¹, Qiang Liu^2、†, Wenjie Yu², Youming Lu¹, and Xinke Liu^1、*

Author Affiliations

¹College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

²State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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DOI: 10.1364/PRJ.385885 Cite this Article Set citation alerts

Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu. Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition[J]. Photonics Research, 2020, 8(6): 799 Copy Citation Text

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