[1] Sudradjat F F, Zhang W, Woodward J, et al. Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells［J］. Appl. Phys. Lett., 2012,100(24)： 11131114.

[2] Huang H B, Zheng W M, Cong W Y, et al. Raman and photoluminescence studies of transitions of quantum-confined acceptors［J］. Phys. Status. Solidi. B, 2013,250(7)： 13521355.

[3] Gammon D, Merlin R, Masselink W T, et al. Raman spectra of shallow acceptors in quantum-well structures［J］. Phys. Rev. B, 1986,33(4)： 29192922.

[4] Wang Z P, Jiang D S. Raman scattering of (GaAs)n(AlAs)nsuperlattices［J］. Solid State Commun. 1988,65(7)： 661663.

[5] Sood A K, Menendez J, Cardona M, et al. Interface Vibrational Modes in GaAs-AIAs Superlattices［J］. Phys. Rev. Lett., 1985,54(19)： 21152118.

[6] Gant T A, Delaney M, Klein M V. Resonant Raman studies of confined LO modes and interface modes in a small-period GaAs/AlAs superlattice［J］. Phys. Rev. B., 1989,39(3)： 16961702.

[7] Zheng W M, Halsall M P, Harmer P, et al. Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells［J］. Appl. Phys. Lett., 2004,84(5)： 735737.

[8] Dean P J, Cuthbert J D, Thomas D G, et al. Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide［J］. Phys. Rev. Lett., 1967,18(4)： 122124.

[9] Harrison P. Quantum Wells, Wires and Dots： Theoretical and Computational Physics ［M］. England： John Wiley & Sons Ltd., 2000, 7183.