• Acta Optica Sinica
  • Vol. 44, Issue 8, 0814002 (2024)
Zhennuo Wang1、2, Li Zhong1、2、*, Deshuai Zhang1、2、**, Suping Liu1, Zhipeng Pan1、2, Jinyuan Chang1、2, Tianjiang He1、2, and Xiaoyu Ma1、2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    DOI: 10.3788/AOS231905 Cite this Article Set citation alerts
    Zhennuo Wang, Li Zhong, Deshuai Zhang, Suping Liu, Zhipeng Pan, Jinyuan Chang, Tianjiang He, Xiaoyu Ma. 976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle[J]. Acta Optica Sinica, 2024, 44(8): 0814002 Copy Citation Text show less
    Refractive index and normalized optical field distribution of diode laser epitaxial structure
    Fig. 1. Refractive index and normalized optical field distribution of diode laser epitaxial structure
    Light field distribution of ridge waveguide
    Fig. 2. Light field distribution of ridge waveguide
    P-I-V characteristic curves of ridge diode laser
    Fig. 3. P-I-V characteristic curves of ridge diode laser
    Emission spectrum of ridge diode laser at maximum output power
    Fig. 4. Emission spectrum of ridge diode laser at maximum output power
    Far-field intensity distribution of ridge diode laser
    Fig. 5. Far-field intensity distribution of ridge diode laser
    Horizontal far-field intensity distribution of ridge diode laser under different injection currents
    Fig. 6. Horizontal far-field intensity distribution of ridge diode laser under different injection currents
    P-I characteristics of ridge diode laser at different operating temperatures
    Fig. 7. P-I characteristics of ridge diode laser at different operating temperatures
    Horizontal far-field intensity distribution of ridge diode laser at different temperatures
    Fig. 8. Horizontal far-field intensity distribution of ridge diode laser at different temperatures
    Layer orderLayerMaterialThickness /μmDoped concentration /cm-3
    9Ohmic contactGaAs0.2C: 1×1020
    8Upper confinementAl0.4GaAs0.7C: 1×1018
    7Upper waveguideAl0.15GaAs0.7Undoped
    6Upper transitionAl0.1GaAs0.04Undoped
    5Active regionInGaAs/GaAsP-Undoped
    4Lower transitionAl0.1GaAs0.04Undoped
    3Lower waveguideAl0.15GaAs1.6Undoped
    2Lower confinementAl0.4GaAs0.8Si: 5×1017
    1Buffer layerGaAs0.5Si: 1×1018
    0SubstrateGaAs--
    Table 1. Epitaxial structure parameters of ridge diode laser
    Zhennuo Wang, Li Zhong, Deshuai Zhang, Suping Liu, Zhipeng Pan, Jinyuan Chang, Tianjiang He, Xiaoyu Ma. 976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle[J]. Acta Optica Sinica, 2024, 44(8): 0814002
    Download Citation