• Photonics Research
  • Vol. 12, Issue 10, 2178 (2024)
Zhiqiang Quan1,2 and Jian Wang1,2,*
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2Optics Valley Laboratory, Wuhan 430074, China
  • show less
    DOI: 10.1364/PRJ.525448 Cite this Article Set citation alerts
    Zhiqiang Quan, Jian Wang, "Photonic crystal topological interface state modulation for nonvolatile optical switching," Photonics Res. 12, 2178 (2024) Copy Citation Text show less

    Abstract

    Phase change materials (PCMs), characterized by high optical contrast (Δn>1), nonvolatility (zero static power consumption), and quick phase change speed (ns), provide new opportunities for building low-power and highly integrated photonic tunable devices. Optical integrated devices based on PCMs, such as optical switches and optical routers, have demonstrated significant advantages in terms of modulation energy consumption and integration. In this paper, we theoretically verify the solution for a highly integrated nonvolatile optical switch based on the modulation of the topological interface state (TIS) in the quasi-one-dimensional photonic crystal (quasi-1D PC). The TIS exciting wavelength changes with the crystalline level of the PCM. The extinction ratio (ER) of the topological optical switch is over 18 dB with a modulation length of 9 μm. Meanwhile, the insertion loss (IL) can be controlled within 2 dB. Furthermore, we have analyzed the impact of fabrication errors on the device’s performance. The obtained results show that, the topological optical switch, which changes its “on/off” state by modulating TIS, exhibits enhanced robustness to the fabrication process. We provide an interesting and highly integrated scheme for designing the on-chip nonvolatile optical switch. It offers great potential for designing highly integrated on-chip optical switch arrays and nonvolatile optical neural networks.
    {nA1=neff,airholenB1=neff,SinA2=neff,Sb2Se3nB2=neff,airhole.

    View in Article

    sgn[ξ(n)]=(1)n+lexp(im=0n1θmZak),

    View in Article

    θnZak=πΛπΛ[iunitε(z)un,q*(z)qun,q(z)]dq,

    View in Article

    exp(iθ0Zak)=sgn[1εaμbεbμa].

    View in Article

    ωm=kπcnada+nb(Λda),

    View in Article