[1] Y Hou, Z M Huang, Y Gao. Characterization of Mn1.56Co0.96Ni0.48O4 films for infrared detection. Applied Physics Letters, 92, 202115(2008).
[2] R Dannenberg, S Baliga. Resistivity, thermopower and the correlation to infrared active vibrations of Mn1.56Co0.96Ni0.48O4 spinel films sputtered in an oxygen partial pressure series. Journal of Applied Physic, 86, 514-523(1999).
[3] W W Kong, L Chen, B Gao, et al. 48O4 free-standing ultrathin chips. Ceramics International,, 40, 8405-8409(2014).
[4] C Ma, W Ren, L Wang, et al. 48O4)1-x(LaMnO3)x composite thin films. Journal of the European Ceramic Society,, 36, 4059-4064(2016).
[5] G Balakrishnan, S Tripura Sundari, R Ramaseshan. Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films. Ceramics International, 39, 9017-9023(2013).
[6] Y Q Gao, Z M Huang, Y Hou. Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films. Applied Surface Science, 256, 2552-2556(2010).
[7] W Q Di, F Liu, T Lin. Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition. Applied Surface Science, 447, 287-291(2018).
[8] W Zhou, L Zhang, C Ouyang. Micro structural, electrical and optical properties of highly (220) oriented spinel Mn-Co-Ni-O film grown by radio frequency magnetron sputtering. Applied Surface Science, 311, 443-447(2014).
[9] Y Xie, G Ji, H Bu, W Kong. Effect of oxygen partial pressure and temperature on NTC characteristics of Mn1.56Co0.96Ni0.48O4 thin films grown on SrTiO3 (100) by laser MBE. Journal of Alloys and Compounds, 611, 100-103(2014).
[10] T Matsuyama, A Sakuda, A Hayashi. Preparation of amorphous TiSx thin film electrodes by the PLD method and their application to all-solid-state lithium secondary batteries. Journal of Materials Science, 47, 6601-6606(2012).
[11] P X Yang, X J Meng, Z M Huang. Ferroelectric polaron in layered perovskite ferroelectric thin films. Journal of Infrared and Millimeter Waves, 24, 1-6(2005).
[12] Pandis Ch, N Brilis, D Tsamakis. Role of Low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates. Solid State Electronics, 50, 1119-1123(2005).
[13] W W Kong, W Wei, B Gao. Mn1.56Co0.96Ni0.48O4±δ flexible thin films fabricated by pulsed laser deposition for NTC applications. Materials Science and Engineering B, 206, 39-44(2016).
[14] G Ji, A Chang, J Xu. Low-temperature (<300 °C) growth and characterization of single-[100]-oriented Mn–Co–Ni–O thin films. Materials Letters, 107, 103-106(2013).
[15] Y H Xie, W W Kong. Growth mode and properties of Mn-Co-Ni-O NTC thermistor thin films deposited on MgO (100) substrate by laser MBE. Modern Physics Letters,, 30, 1450235(2014).
[16] L He, Z Y Ling, Y T Huang. Effects of annealing temperature on microstructure and electrical properties of Mn-Co-Ni-O thin films. Materials Letters, 65, 1632-1635(2011).
[17] J Y Wang, J J Zhang. Structural and electrical properties of NiMgxMn2-xO4 NTC thermistors prepared by using sol–gel derived powders. Materials Science and Engineering B, 176, 616-619(2011).
[18] W Zhou, J Wu, C Ouyang. Optical properties of Mn-Co-Ni-O thin films prepared by radio frequency sputtering deposition. Journal of Applied Physics, 115, 056601(2014).
[19] W W Kong, H J Bu, B Gao. Effects of preferred orientation on electrical properties of Mn1.56Co0.96Ni0.48O4±δ spinel films. Materials Letters, 137, 36-40(2014).
[20] L He, Z Y Ling, D X Ling. Role of film thickness on the microstructure and electrical properties of Mn-Co-Ni-O thin film thermistors. Materials Science and Engineering B, 198, 20-24(2015).
[21] J M D Coey, M Viret, L Ranno. Electron localization in mixed-valence manganites. Physical Review Letters, 75, 3910-3913(1995).
[22] K Park, D Y Bang. Electrical properties of Ni–Mn–Co–(Fe) oxide thick-film NTC thermistors prepared by screen printing. Journal of Materials Science: Materials in Electronics, 14, 81-87(2003).
[23] G Ji, A M Chang, H Y Li. Epitaxial growth of Mn–Co–Ni–O thin films and thickness effects on the electrical properties. Materials Letters, 130, 127-130(2014).
[24] A L Efros, B I Shklovskii. Coulomb gap and low-temperature conductivity of disordered systems. Journal of Physics C: Solid State Physics, 8, L239-L240(1975).
[25] R Schmidt, A Basu, A W Brinkman. Electron-hopping modes in NiMn2O4+δ materials. Applied Physics Letters, 86, 325(2005).
[26] J Wu, Z Huang, Y Hou. Structural, electrical, and magnetic properties of Mn2.52-xCoxNi0.48O4 films. Journal of Applied Physics, 107, 256403(2010).
[27] L B Duan, G H Rao, J Yu. Structural and magnetic properties of chemically synthesized Sn1-xMnxO2 nanocrystalline powders. Journal of Applied Physics, 101, 063917(2007).
[28] O Peña, Y Ma, M Bahout. Structural and physical properties of spinel-type NiMn2-xCoxO4 oxides. Physica Status Solidi (c), 1, S31-S34(2004).
[29] A Punnoose, J Hays, V Gopal. Room-temperature ferromagnetism in chemically synthesized Sn1-xCoxO2 powders. Applied Physics Letters, 85, 1559-1561(2004).
[30] J M D Coey, M Viret, S von Molnár. Mixed-valence manganites. Advances in Physics, 58, 571-697(2009).