Anchen WANG, Zhongmei HUANG, Weiqi HUANG, Qian ZHANG, Chun LIU, Zilin WANG, Ke WANG, Shirong LIU. Influence of Silicon Oxide Layer Thickness on Electronic State Structure and Optical Properties of Si/SiO2 Interface[J]. Acta Photonica Sinica, 2023, 52(1): 0116001
- Acta Photonica Sinica
- Vol. 52, Issue 1, 0116001 (2023)
Fig. 1. Energy band structure of block α-cristobalite
Fig. 2. Total density of states and partial electron density of bulk α-cristobalite
Fig. 3. Structure of α-cristobalite film with different thickness.
Fig. 4. Energy band structure of α-cristobalite film with different α-cristobalite thickness
Fig. 5. Relationship between the band gap of α-cristobalite and the thickness of α-cristobalite in thin films
Fig. 6. Structure of Si/SiO2 interface with different thickness of silicon oxide layer
Fig. 7. Energy band structure of Si/SiO2 interface with different thickness of silicon oxide layer
Fig. 8. Relationship between energy band gap of Si/SiO2 interface and thickness of silicon oxide layer
Fig. 9. The total density of states and the density of partial wave electrons at the Si/SiO2 interface with the thickness of the silicon oxide layer of 1.047 nm and 2.887 nm
Fig. 10. Relationship between imaginary part of dielectric function of Si/SiO2 interface and thickness of silicon oxide layer
Fig. 11. Relationship between absorption coefficient of Si/SiO2 interface and thickness of silicon oxide layer
Fig. 12. Relationship between the refractive index of Si/SiO2 interface and the thickness of silicon oxide layer
Fig. 13. Optical microscope image of the prepared Si/SiO2 interface
Fig. 14. PL spectrum on Si/SiO2 interface
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