• Laser & Optoelectronics Progress
  • Vol. 55, Issue 5, 053103 (2018)
Yuanyuan Liu1、1; , Xufeng Li1、1; , Yali Zhao1、2; , Wei Peng1、3; , and Wen Yang1、1;
Author Affiliations
  • 1 No.33 Research Institute of China Electronics Technology Group Corporation, Taiyuan, Shanxi 0 30024, China
  • 1 School of Applied Science, Taiyuan University of Science and Technology, Taiyuan, Shanxi 0 30024, China
  • 1 School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning 116024, China
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    DOI: 10.3788/LOP55.053103 Cite this Article Set citation alerts
    Yuanyuan Liu, Xufeng Li, Yali Zhao, Wei Peng, Wen Yang. Influence of Defect Modes of Metal Films on Filtering Characteristics of One-dimensional Photonic Crystals[J]. Laser & Optoelectronics Progress, 2018, 55(5): 053103 Copy Citation Text show less
    Structure of 1D photonic crystal with defects
    Fig. 1. Structure of 1D photonic crystal with defects
    (a) Transmissivity distribution; (b) transmission spectrum at dc=50 nm
    Fig. 2. (a) Transmissivity distribution; (b) transmission spectrum at dc=50 nm
    Dispersion curves of photonic crystal under different conditions. (a) dc=20 nm; (b) dc=50 nm; (c) dc=80 nm
    Fig. 3. Dispersion curves of photonic crystal under different conditions. (a) dc=20 nm; (b) dc=50 nm; (c) dc=80 nm
    Transmissivity of photonic crystal versus incident wavelength under different incident angles
    Fig. 4. Transmissivity of photonic crystal versus incident wavelength under different incident angles
    (a) Effect of ITO film thickness on transmissivity of photonic crystal; (b) relationship between transmissivity and ITO film thickness at 400 nm wavelength
    Fig. 5. (a) Effect of ITO film thickness on transmissivity of photonic crystal; (b) relationship between transmissivity and ITO film thickness at 400 nm wavelength
    Yuanyuan Liu, Xufeng Li, Yali Zhao, Wei Peng, Wen Yang. Influence of Defect Modes of Metal Films on Filtering Characteristics of One-dimensional Photonic Crystals[J]. Laser & Optoelectronics Progress, 2018, 55(5): 053103
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