• High Power Laser and Particle Beams
  • Vol. 33, Issue 9, 091001 (2021)
Lin’an He1、2, Kun Zhou1、2, Liang Zhang1、2, Yi Li1、2, Weichuan Du1、2, Yao Hu1、2, Songxin Gao1、2, and Chun Tang1、2
Author Affiliations
  • 1The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China
  • 2Institute of Applied Electronics, CAEP, Mianyang 621900, China
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    DOI: 10.11884/HPLPB202133.210099 Cite this Article
    Lin’an He, Kun Zhou, Liang Zhang, Yi Li, Weichuan Du, Yao Hu, Songxin Gao, Chun Tang. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33(9): 091001 Copy Citation Text show less
    References

    [1] Rotondaro M D, Zhdanov B V, Shaffer M K, et al. Narrowband diode laser pump module for pumping alkali vapors[J]. Optics Express, 26, 9792-9797(2018).

    [2] Koenning T, McCmick D, Irwin D, et al. DPAL pump system exceeding 3 kW at 766 nm 30 GHz bwidth[C]Proceedings of SPIE 9733, HighPower Diode Laser Technology Applications XIV. 2016: 97330E.

    [3] Vinokurov D A, Zorina S A, Kapitonov V A, et al. MOCVD GaInAsP/GaInP/AlGaInP laser structures emitting at 780 nm[J]. Semiconductors, 37, 1421-1424(2003).

    [4] Moulton P F, Rines G A, Slobodtchikov E V, et al. Tm-doped fiber lasers: fundamentals and power scaling[J]. IEEE Journal of Selected Topics in Quantum Electronics, 15, 85-92(2009).

    [5] Pitz G A, Anderson M D. Recent advances in optically pumped alkali lasers[J]. Applied Physics Reviews, 4, 041101(2017).

    [6] Keaveney J, Hamlyn W J, Adams C S, et al. A single-mode external cavity diode laser using an intra-cavity atomic Faraday filter with short-term linewidth < 400 kHz and long-term stability of < 1 MHz[J]. Review of Scientific Instruments, 87, 095111(2016).

    [7] Hempel M, Tomm J W, Ziegler M, et al. Catastrophic optical damage at front and rear facets of diode lasers[J]. Applied Physics Letters, 97, 231101(2010).

    [8] Sanayeh M B, Brick P, Sch W, et al. The physics of catastrophic optical damage in highpower AlGaInP laser diodes[C]Proceedings of SPIE 6997, Semiconduct Lasers Laser Dynamics III. 2008: 699703.

    [9] Christopher H, Kovalchuk E V, Wenzel H, et al. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780 nm[J]. Applied Optics, 56, 5566-5572(2017).

    [10] Sanayeh M B, Brick P, Schmid W, et al. Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes[J]. Applied Physics Letters, 91, 041115(2007).

    [12] Bao Ling, Wang Jun, Devito M, et al. Perfmance reliability of high power 7xx nm laser diodes[C]Proceedings of SPIE 7953, Novel InPlane Semiconduct Lasers X. 2011: 79531B.

    [13] Liu Guoli, Lehkonen S, Li Jingwei, et al. High power reliable 793nm single emitter Tbar f thuliumdoped fiber laser pumping[C]Proceedings of SPIE 11262, HighPower Diode Laser Technology XVIII. 2020: 1126208.

    [14] Crump P, Wilkens M, Hübner M, et al. Efficient, high power 780 nm pumps f high energy class infrared solid state lasers[C]Proceedings of SPIE 11262, HighPower Diode Laser Technology XVIII. 2020: 1126204.

    [16] Ressel P, Erbert G, Zeimer U, et al. Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers[J]. IEEE Photonics Technology Letters, 17, 962-964(2005).

    [17] Koenning T, McCmick D, Irvin D, et al. Narrowline fibercoupled modules f DPAL pumping[C]Proceedings of SPIE 9348, HighPower Diode Laser Technology Applications XIII. 2015: 934805.

    [19] Venus G B, Sevian A, Smirnov V I, et al. Highbrightness narrowline laser diode source with volume Bragggrating feedback[C]Proceedings of SPIE 5711, HighPower Diode Laser Technology Applications III. 2005.

    CLP Journals

    [1] Yi Li, Haomiao Wang, Liang Zhang, Yuwen He, Kun Zhou, Weichuan Du, Linan He, Yao Hu, Deyong Wu, Songxin Gao, Chun Tang. High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation[J]. High Power Laser and Particle Beams, 2023, 35(11): 111002

    Lin’an He, Kun Zhou, Liang Zhang, Yi Li, Weichuan Du, Yao Hu, Songxin Gao, Chun Tang. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33(9): 091001
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