• High Power Laser and Particle Beams
  • Vol. 33, Issue 9, 091001 (2021)
Lin’an He1、2, Kun Zhou1、2, Liang Zhang1、2, Yi Li1、2, Weichuan Du1、2, Yao Hu1、2, Songxin Gao1、2, and Chun Tang1、2
Author Affiliations
  • 1The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China
  • 2Institute of Applied Electronics, CAEP, Mianyang 621900, China
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    DOI: 10.11884/HPLPB202133.210099 Cite this Article
    Lin’an He, Kun Zhou, Liang Zhang, Yi Li, Weichuan Du, Yao Hu, Songxin Gao, Chun Tang. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33(9): 091001 Copy Citation Text show less
    Refractive index and mode distribution diagram of 780 nm semiconductor laser
    Fig. 1. Refractive index and mode distribution diagram of 780 nm semiconductor laser
    Power and wall-plug efficiency curves of 780 nm semiconductor laser
    Fig. 2. Power and wall-plug efficiency curves of 780 nm semiconductor laser
    Far field and near field of 780 nm semiconductor laser
    Fig. 3. Far field and near field of 780 nm semiconductor laser
    Power, conversion efficiency and spectrum curves of the 780 nm semiconductor laser before and after mode locked by VBG
    Fig. 4. Power, conversion efficiency and spectrum curves of the 780 nm semiconductor laser before and after mode locked by VBG
    Spectrum curves of the 780 nm semiconductor laser at different VBG heating current
    Fig. 5. Spectrum curves of the 780 nm semiconductor laser at different VBG heating current
    Lin’an He, Kun Zhou, Liang Zhang, Yi Li, Weichuan Du, Yao Hu, Songxin Gao, Chun Tang. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 2021, 33(9): 091001
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