In order to fabricate the phosphor-free InGaN/GaN multiple quantum wells (MQWs) with white light emission, the GaN microfacets with trapezoidal structure were grown using SiO2 stripe mask patterns, and then the InGaN/GaN multiple quantum wells (MQWs) were regrown on the GaN microfacets, forming dual-wavelength emissions in a single chip. The results indicate that, the trapezoidal GaN microfacet is composed of (0001) and (11-22) planes, which is attributed to the differences of surface polarity and surface energy. Also, the different color emissions on (0001) and (11-22) planes are due to the different diffusion rates of In and Ga adatoms; this property allows microfacet MQWs emit blue light (emission peak at 420 nm) from the (11-22) plane and yellow light (emission peak at 525 nm) from the top (0001) plane, the mixing of which leads to the perception of white light emission.