[1] Feinleib J, Ovshinsky S R. Reflectivity studies of the Te(Ge,As-)-based amorphous semiconductor in the conducting and insulating states. J. Non. Cryst. Sol., 1970, 4:564~572
[2] Chen M, Rubin K A, Marello V et al.. Reversibility and stability of tellurium alloys for optical data storage applications. Appl. Phys. Lett., 1985, 46(8):734~736
[3] Yamada N, Ohno E, Nishiuchi K et al.. Rapid-phase transitions of GeTe-Sb2Te3 pesudobinary amorphous thin film for an optical disk memory. J. Appl. Phys., 1991, 69(5):2849~2856
[4] Nobukuni N, Takashima M, Ohno T et al.. Microstructural changes in GeSbTe film during repetitious overwriting in phase-change optical recording. J. Appl. Phys., 1995, 78(12):6980~6987
[5] Rabe K M, Joannopoulos J D. Structural properties of GeTe at T=0. Phys. Rev. (B), 1987, 36(6):3319~3324
[6] Gonzalez-Hernandez J, Strand D, Ovshinsky S R et al.. Free carrier absorption in the Ge:Te:Sb system. Solid State Communications, 1995, 95(9):593
[8] Kim J H, Kim M R. Effects of microstructure on optical properties of Ge2Sb2Te5 thin films. Jpn. J. Appl. Phys., Part 1, 1998, 37(4B):2116~2117