• Acta Optica Sinica
  • Vol. 21, Issue 3, 313 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Sputtering Ar Pressure on the Optical Constants of Ge2Sb2Te5 Thin Films[J]. Acta Optica Sinica, 2001, 21(3): 313 Copy Citation Text show less
    References

    [1] Feinleib J, Ovshinsky S R. Reflectivity studies of the Te(Ge,As-)-based amorphous semiconductor in the conducting and insulating states. J. Non. Cryst. Sol., 1970, 4:564~572

    [2] Chen M, Rubin K A, Marello V et al.. Reversibility and stability of tellurium alloys for optical data storage applications. Appl. Phys. Lett., 1985, 46(8):734~736

    [3] Yamada N, Ohno E, Nishiuchi K et al.. Rapid-phase transitions of GeTe-Sb2Te3 pesudobinary amorphous thin film for an optical disk memory. J. Appl. Phys., 1991, 69(5):2849~2856

    [4] Nobukuni N, Takashima M, Ohno T et al.. Microstructural changes in GeSbTe film during repetitious overwriting in phase-change optical recording. J. Appl. Phys., 1995, 78(12):6980~6987

    [5] Rabe K M, Joannopoulos J D. Structural properties of GeTe at T=0. Phys. Rev. (B), 1987, 36(6):3319~3324

    [6] Gonzalez-Hernandez J, Strand D, Ovshinsky S R et al.. Free carrier absorption in the Ge:Te:Sb system. Solid State Communications, 1995, 95(9):593

    [8] Kim J H, Kim M R. Effects of microstructure on optical properties of Ge2Sb2Te5 thin films. Jpn. J. Appl. Phys., Part 1, 1998, 37(4B):2116~2117

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effects of Sputtering Ar Pressure on the Optical Constants of Ge2Sb2Te5 Thin Films[J]. Acta Optica Sinica, 2001, 21(3): 313
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