Tao-Tao Que, Ya-Wen Zhao, Qiu-Ling Qiu, Liu-An Li, Liang He, Jin-Wei Zhang, Chen-Liang Feng, Zhen-Xing Liu, Qian-Shu Wu, Jia Chen, Cheng-Lang Li, Qi Zhang, Yun-Liang Rao, Zhi-Yuan He, Yang Liu. Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric[J]. Chinese Physics B, 2020, 29(10):
- Chinese Physics B
- Vol. 29, Issue 10, (2020)
Fig. 1. (a) Transfer and (b) off-state blocking voltage characteristics of the GaN MIS-HEMT.
Fig. 2. (a) Test diagrams of negative bias stress and (b) time-dependent breakdown with V GS = −295 V, −300 V, −305 V, respectively, and (c) lifetime extrapolation for 20 years based on 1/E model with failure rate of 63.2% and 0.01%.
Fig. 3. (a) Test diagrams of off-state stress and (b) time-dependent breakdown during off-state stress with V DS = 280 V and V DS = 270 V @V DG = 295 V.
Fig. 4. (a) The comparison of time-dependent breakdown between negative gate voltage stress and off-state stress. (b) Two sudden increasing trends of gate leakage occur during both stress conditions.
Fig. 5. Breakdown time distribution (β ) of (a) negative gate bias with V GS = −295 V, −300 V, −305 V, respectively and (b) off-state stress with V DS = 280 V and V DS = 270 V @V DG = 295 V.
Fig. 6. Simulation of electric field distribution for rapid breakdown under (a) negative bias stress @V DG = 295 V and (b) off-state stress @V DG = 295 V. (c) Extraction of electric field distribution at the cutline of 10 nm below SiNx /AlGaN interface for both of the two stress conditions.
Fig. 7. The evolution of threshold voltage and on resistance during stress and recovery conditions of V GS = −200 V, V DS = 0 V, and V GS = −15 V, V DS = 185 V @V DG = 200 V.
Fig. 8. The evolution of leakage during (a) negative gate bias at V GS = −200 V, V DS = 0 V @V DG = 295 V and (b) off-state stress at V GS = −15 V, V DS = 185 V @V DG = 200 V.
Fig. 9. The schematic mechanism for the negative bias stress (a)–(c) and off-state time-dependent breakdown process (e)–(g).
Fig. 10. Transfer characteristics and I GS before stress and after adequate recovery of (a) negative bias stress at V GS = −200 V, V DS = 0 V @V DG = 200 V and (b) off-state stress at V GS = −15 V, V DS = 185 V @V DG = 200 V.
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