Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS

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[1] Lawson W D, Nielson S, Putley E H, et al. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe. J.Phys. Chem. Solids, 1959, 9: 325-329

[2] Broudy R M, Mazurczyk V J. Semiconductors and Semimetals. New York: Academic Press, 1981, 18: 157-161

[3] Brice J, Capper P, eds. Properties of Mercury Cadmium Telluride. EMIS Datareview Series 3.London: IEE-INSPEC 1987: chap.1

[4] Capper P ed. Properties of Narrow Gap Cadmium-based Compounds. EMIS Datareview Series 10. London: IEE-INSPEC 1994: chap.1

[5] Capper P ed. Gap Ⅱ-Ⅳ Compounds for Opotoelectronic and Electromagnetic Applications. London: Chapman & Hall Press, 1997

[6] Turrell G, Corset J, eds. Raman Microscopy-Developments and Applications. New York: Academic Press, 1996: Chap.2

[7] Huang H, Xu J J, Qiao H J, et al. Micro-photoluminescence and micro-Raman spectra of MOCVD HgCdTe/CdZnTe epitaxial films. Semicondors Science and Technology. 2001, 16: L85-L88

[9] Capper P. Direct energy gap of HgCdTe. In: Capper Peter ed. Properties of Narrow-Gap Cadmium-based Compounds. EMIS Datareviews Series 10. London: IEE-INSPEC, 1994, 207-211

[10] Swarts C A, Daw M S, McGill T C. Bulk vacancies in CdxHg1-xTe. J.Vac.Sci.Technol., 1982, 21: 198-200

[11] Wang C L, Wu S, Pan D S. Application of generalized effective mass theory to some native point defects in Hg1-xCdxTe. J.Vac.Sci.Technol., 1983, A 1(3): 1631-1632