Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 22 >Issue 1 >Page 27 > Article

Journal of Infrared and Millimeter Waves
Vol. 22, Issue 1, 27 (2003)

Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS

[in Chinese]^1、2, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 27 Copy Citation Text

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Abstract

The MOVPE Hg 1-xCd xTe epitaxial film, LPE Hg 1-xCd xTe epitaxial film and Hg 1-xCd xTe bulk wafers grown by ACRT-Bridgman and Te solvent methods were measured by means of Raman microscopy in the room temperature. In all the experimental specimen, the micro-Photoluminescence emission centered above the bottom of Hg 1-xCd xTe conduction band about 1.5eV were observed for the first time. It is confirmed that the micro-photoluminescence was induced by the Te ion vacancy resonance level.

Keywords

micro-photoluminescence Raman microscopy.Te ion vacancies Hg1-x CdxTe materials

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Te ION VACANCY RESONANCE LEVEL IN Hg1-xCdxTe MATERIALS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(1): 27

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