• Infrared and Laser Engineering
  • Vol. 45, Issue 10, 1021001 (2016)
Chen Jing1、2, Cheng Hongchang1, Wu Lingling1、2, Feng Liu1, and Miao Zhuang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201645.1021001 Cite this Article
    Chen Jing, Cheng Hongchang, Wu Lingling, Feng Liu, Miao Zhuang. Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers[J]. Infrared and Laser Engineering, 2016, 45(10): 1021001 Copy Citation Text show less
    References

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    [2] Guo Xiangyang, Chang Benkang, Qiao Jianliang, et al. Comparison of stability of GaN and GaAs photocathode[J]. Infrared Technology, 2010, 32(2): 117-120. (in Chinese)

    [3] Du Yujie, Chang Benkang, Fu Xiaoqian, et al. Effects of NEA GaN photocathode performance parameters on quantum efficiency[J]. Optik, 2012, 123(9): 800-803.

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    [8] Chen Weilan. Research on stresses in optical films[D]. Hangzhou: Zhejiang University, 2008. (in Chinese)

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    [10] Liu Xing, Zhu Jiaqi, Han Jiecai. Thermal stresses in elastic multilayer systems[J]. Mechanics in Engineering, 2014, 36(4): 453-456. (in Chinese)

    [11] Townsend P H, Barnett D M, Brunner T A. Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate[J]. Journal of Applied Physics, 1987, 62(11): 4438-4444.

    [12] Li Ying′ai. Preparation and field emission characteristics of AIN thin films[D]. Changchun: Jilin University, 2004. (in Chinese)

    [13] Xing Zhiggang. Study on micro-structure of GaN films epitaxially grown on patterned sapphire substrate[D]. Beijing: Institute of Physics CAS, 2007. (in Chinese)

    [14] Wu Liangzhen, Tang Jieyu, Ma Yuanxin, et al. Simulation of thermal stress in SiO2 thin film[J]. Journal of South China Normal University(Natural Science Edition), 2009, 1(1): 52-55. (in Chinese)

    Chen Jing, Cheng Hongchang, Wu Lingling, Feng Liu, Miao Zhuang. Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers[J]. Infrared and Laser Engineering, 2016, 45(10): 1021001
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