• Journal of Infrared and Millimeter Waves
  • Vol. 37, Issue 6, 683 (2018)
LIU Jun, YU Wei-Hua*, YANG Song-Yuan, HOU Yan-Fei, CUI Da-Sheng, and LYU Xin
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.11972/j.issn.1001-9014.2018.06.008 Cite this Article
    LIU Jun, YU Wei-Hua, YANG Song-Yuan, HOU Yan-Fei, CUI Da-Sheng, LYU Xin. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 683 Copy Citation Text show less
    References

    [1] Smith P M, Ashman M, Xu D, et al. A 50 nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance[C]// Microwave Symposium. IEEE, 2014:1-4.

    [2] Varonen M, Larkoski P, Fung A, et al. 160~270 GHz InP HEMT MMIC Low-noise amplifiers[C]// Compound Semiconductor Integrated Circuit Symposium. IEEE, 2012:1-4.

    [3] Chiong C C, Chen H M, Kao J C, et al. 180~220 GHz MMIC amplifier using 70-nm GaAs MHEMT technology[C]// IEEE International Symposium on Radio-Frequency Integration Technology. IEEE, 2016:1-4.

    [4] Campos-Roca Y, Schworer C, Leuther A, et al. G-band metamorphic HEMT-based frequency multipliers[J]. Microwave Theory & Techniques IEEE Transactions on, 2006, 54(7):2983-2992.

    [5] Zamora A, Leong K M K H, Reck T, et al. A 170~280 GHz InP HEMT low noise amplifier[C]// International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE, 2014:1-2.

    [6] Gunnarsson S E, Wadefalk N, Angelov I, et al. A 220 GHz (G-Band) microstrip MMIC single-ended resistive mixer[J]. IEEE Microwave & Wireless Components Letters, 2008, 18(3):215-217.

    [7] Tessmann A. 220 GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications[J]. IEEE Journal of Solid-State Circuits, 2005, 40(10):2070-2076.

    [8] Farkas D S, Sarkozy S J, Katz R. A W-band 100 nm InP HEMT ultra low noise amplifier[C]// Microwave Conference. IEEE, 2015:229-231.

    [9] Smith D, Dambrine G, Orlhac J C. Industrial MHEMT technologies for 80~220 GHz applications[C]// Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European. IEEE, 2009:214-217.

    [10] Kang Y, Wang W, Gao J, et al. 100 nm MHEMT transistor technology for W-band amplifier[C]// Antennas and Propagation. IEEE, 2014:1339-1341.

    [11] Takahashi T, Sato M, Nakasha Y, et al. Improvement of RF and noise characteristics using a cavity structure in InAlAs/InGaAs HEMTs[J]. IEEE Transactions on Electron Devices, 2012, 59(8):2136-2141.

    [12] Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit[J]. Microwave Theory & Techniques IEEE Transactions on, 1988, 43(5-6):274-281.

    [13] Gao J. An approach for determining PHEMT small-signal circuit model parameters up to 110 GHz[J]. International Journal of Infrared & Millimeter Waves, 2005, 26(7):1017-1029.

    [14] Gao J. RF and microwave modeling and measurement techniques for field effect transistors[M]. IET Digital Library, 2010.

    [15] Wang Z M, Lv X, Luo X B, et al. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J]. Journal of Semiconductors, 2015, 36(2):72-76.

    [16] Sarkar M, Banerjee P, Majumder A. Design of broadband MMIC low noise amplifier at W band using GaAs pHEMTs[C]// International Conference on Innovations in Electronics, Signal Processing and Communication. 2017:194-198.

    [17] Bessemoulin A, Tarazi J, Mcculloch M G, et al. 0.1- m GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology[C]// Microwave Symposium. IEEE, 2015:1-2.

    LIU Jun, YU Wei-Hua, YANG Song-Yuan, HOU Yan-Fei, CUI Da-Sheng, LYU Xin. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 683
    Download Citation