• Opto-Electronic Engineering
  • Vol. 46, Issue 10, 180679 (2019)
Zhang Yuhu*, Li Yawen, Luo Chuanwen, Li Li, Cao Shaobo, and Ma Xiaohui
Author Affiliations
  • [in Chinese]
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    DOI: 10.12086/oee.2019.180679 Cite this Article
    Zhang Yuhu, Li Yawen, Luo Chuanwen, Li Li, Cao Shaobo, Ma Xiaohui. The effect of TFT lithography plane inclination on lithography pattern and improvement[J]. Opto-Electronic Engineering, 2019, 46(10): 180679 Copy Citation Text show less
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    [3] Li L, Wen D Z, Li G, et al. Focused fabrication and characteristics of α-Si: H TFTs based on silicon-on-insulator materials[J].High Power Laser and Particle Beams, 2015, 27(2): 173–177.

    [4] Liu D, Qin G, Cai W C, et al. Profile and critical dimension bias of Mo/Al/Mo electrode[J]. Chinese Journal of Liquid Crystals and Displays, 2017, 32(11): 877–885.

    [5] Chen C L, Di C L, Tang X P, et al. High-speed focusing technique for lithography based on line scan CCD[J]. Infrared and Laser Engineering, 2015, 44(8): 2389–2394.

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    [7] Zhang Y H, Li Y W, Liu X B, et al. Effect of segment difference of photoresist on lithography pattern and improvement[J]. Chinese Journal of Liquid Crystals and Displays, 2018, 33(8): 653–660.

    [8] Zhao K H. Optics[M]. Beijing: Higher Education Press, 2004:277–280.

    Zhang Yuhu, Li Yawen, Luo Chuanwen, Li Li, Cao Shaobo, Ma Xiaohui. The effect of TFT lithography plane inclination on lithography pattern and improvement[J]. Opto-Electronic Engineering, 2019, 46(10): 180679
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