• Journal of Infrared and Millimeter Waves
  • Vol. 35, Issue 6, 652 (2016)
WU Hao*, PENG Hang-Yu, NING Yong-Qiang, and WANG Li-Jun
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2016.06.003 Cite this Article
    WU Hao, PENG Hang-Yu, NING Yong-Qiang, WANG Li-Jun. High efficiency beam shaping of GaSb based diode lasers[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 652 Copy Citation Text show less
    References

    [1] Gaimard Q,Cerutti L,Teissier R,et al. Distributed feedback GaSb based laser diodes with buried grating[J]. Appl. Phys. Lett. 2014, 104(16): 161111.

    [2] Liang R. Hosoda T. Shterengas L. et al. Distributed feedback 3.27μm diode lasers with continuouswave output power above 15 mW at room temperature[J]. Electron. Lett. 2014, 50(19): 1378-1379.

    [3] ApiratikuL P. He L. Leavitt P R. et al. Conference on novel Inplane semiconductor lasers XIII, San Francisco, 2014[C]. In Proc. SPIE, 2014: 900216.

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    [5] Liang R. Shterengas L. Hosoda T. et al. Diffraction limited 3.15μm cascade diode lasers[J]. Semicond. Sci. Tech. 2014, 29(11): 115016.

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    [7] Vizbaras A. Greibus M. Dvinelis E. et al. Novel Inplane semiconductor lasers XIII, San Francisco, 2014[C]. In Proc. SPIE, 2014: 900214.

    [8] Vizbaras A. Dvinelis E. Trinkūnas A. et al. Laser technology for defense and security X, 2014[C]. In Proc. SPIE, 2014: 90810P-1.

    [9] Liang R. Kipshidze G. Hosoda T. et al. 3.33.4μm diode lasers based on triplelayer GaInAsSb quantum wells[J]. IEEE Photon. Tech. Lett. 2014, 26(7): 664-666.

    [10] Shterengas L. Liang R. Kipshidze G. et al. Cascade typeI quantum well diode lasers emitting 960mW near 3μm[J]. Appl. Phys. Lett. 2014, 105(16): 161112.

    WU Hao, PENG Hang-Yu, NING Yong-Qiang, WANG Li-Jun. High efficiency beam shaping of GaSb based diode lasers[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 652
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